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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
DMN3071LFR4-7

DMN3071LFR4-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 3.4A 3DFN

0
DMN3027LFG-7

DMN3027LFG-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 5.3A PWRDI3333-8

634
DMG4496SSS-13

DMG4496SSS-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 10A 8SOP

0
DMP3007LSS-13

DMP3007LSS-13

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 30V 14A 8SO T&R 2

0
DMN6140L-7

DMN6140L-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 1.6A SOT-23

224515
ZXMN15A27KTC

ZXMN15A27KTC

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 150V 1.7A TO252-3

10
DMN2022UFDF-13

DMN2022UFDF-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 7.9A 6UDFN

10000
DMT68M8LSS-13

DMT68M8LSS-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CHANNEL 60V 28.9A 8SO

37500
DMN6070SFCL-7

DMN6070SFCL-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 3A X1-DFN1616-6

199721000
DMP4013SPS-13

DMP4013SPS-13

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 40V 11A PWRDI5060

2500
DMP21D2UFA-7B

DMP21D2UFA-7B

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 20V 330MA 3DFN

2147483647
DMT3006LFG-7

DMT3006LFG-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V PWRDI3333

181
DMP2540UCB9-7

DMP2540UCB9-7

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 25V 4A U-WLB1515-9

434
DMT3003LFG-13

DMT3003LFG-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 22A PWRDI3333

0
DMN4800LSSQ-13

DMN4800LSSQ-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 8.6A 8SO

24335000
DMN2028UFDF-13

DMN2028UFDF-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 7.9A 6UDFN

0
DMP22M2UPS-13

DMP22M2UPS-13

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 20V 60A PWRDI5060-8

0
DMN601WK-7

DMN601WK-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 300MA SOT323

630387000
DMTH6004SK3-13

DMTH6004SK3-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 100A TO252

2
DMTH4004SK3-13

DMTH4004SK3-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 40V 100A TO252

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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