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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
DMN3033LDM-7

DMN3033LDM-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 6.9A SOT-26

2610
BSS123WQ-7-F

BSS123WQ-7-F

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 100V 170MA SOT323

55981
DMTH43M8LFG-13

DMTH43M8LFG-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 40V PWRDI3333

0
DMG4710SSS-13

DMG4710SSS-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 8.8A 8SOP

1916
DMN3008SFGQ-13

DMN3008SFGQ-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V PWRDI3333

3000
ZXM61N02FTC

ZXM61N02FTC

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 1.7A SOT23-3

10000
DMN4468LSS-13

DMN4468LSS-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N CH 30V 10A 8SOP

307
DMN1019USN-13

DMN1019USN-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 12V 9.3A SC59

33460
DMTH6002LPS-13

DMTH6002LPS-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 100A PWRDI5060-8

19578
DMNH4006SK3Q-13

DMNH4006SK3Q-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 40V 20A/140A TO252

10000
DMN601WKQ-13

DMN601WKQ-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V SOT323

60000
DMNH6042SPDQ-13

DMNH6042SPDQ-13

Zetex Semiconductors (Diodes Inc.)

MOSFET NCH 60V 5.7A POWERDI

226810000
DMP6110SSS-13

DMP6110SSS-13

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 60V 8SOIC

1011
ZXMP6A17E6QTA

ZXMP6A17E6QTA

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 60V 2.3A SOT26

0
ZXMN6A11ZTA

ZXMN6A11ZTA

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 2.7A SOT89-3

2012012000
DMT6009LFG-7

DMT6009LFG-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 11A PWRDI3333

0
DMTH4004SCTBQ-13

DMTH4004SCTBQ-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 40V 100A TO263AB

10
DMN2027UPS-13

DMN2027UPS-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 20V 10A PWRDI5060

0
DMTH6004SCT

DMTH6004SCT

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 100A TO220-3

2150
ZXMN3B01FTA

ZXMN3B01FTA

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 30V 1.7A SOT23-3

1502642000

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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