Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
TK11S10N1L,LXHQ Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 100V 11A DPAK	1967
TK10A50W,S5X Toshiba Electronic Devices and Storage Corporation	X35 PB-F POWER MOSFET TRANSISTOR	179
TK22A65X5,S5X Toshiba Electronic Devices and Storage Corporation	X35 PB-F POWER MOSFET TRANSISTOR	200
TK28V65W5,LQ Toshiba Electronic Devices and Storage Corporation	X35 PB-F POWER MOSFET TRANSISTOR	5000
TK7S10N1Z,LXHQ Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 100V 7A DPAK	3895
SSM5H16TU,LF Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 30V 1.9A UFV	2940
TK17A65W5,S5X Toshiba Electronic Devices and Storage Corporation	X35 PB-F POWER MOSFET TRANSISTOR	200
TK3R3A06PL,S4X Toshiba Electronic Devices and Storage Corporation	X35 PB-F POWER MOSFET TRANSISTOR	189
SSM3J144TU,LF Toshiba Electronic Devices and Storage Corporation	MOSFET P-CH 20V 3.2A UFM	5794
TPN2R503NC,L1Q Toshiba Electronic Devices and Storage Corporation	MOSFET N CH 30V 40A 8TSON-ADV	0
TPN6R303NC,LQ Toshiba Electronic Devices and Storage Corporation	MOSFET N CH 30V 20A 8TSON-ADV	0
TK1R4S04PB,LXHQ Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 40V 120A DPAK	3960
SSM6K516NU,LF Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 30V 6A 6UDFNB	6000
TPCP8107,LF Toshiba Electronic Devices and Storage Corporation	MOSFET P-CH 40V 8A PS-8	0
TK17V65W,LQ Toshiba Electronic Devices and Storage Corporation	X35 PB-F POWER MOSFET TRANSISTOR	7500
TK25S06N1L,LQ Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 60V 25A DPAK	0
TK1K7A60F,S4X Toshiba Electronic Devices and Storage Corporation	X35 PB-F POWER MOSFET TRANSISTOR	166
TPN7R006PL,L1Q Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 60V 54A 8TSON	18681
TK4K1A60F,S4X Toshiba Electronic Devices and Storage Corporation	X35 PB-F POWER MOSFET TRANSISTOR	172
SSM6K208FE,LF Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 30V 1.9A ES6	7990

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS