Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
TK5A65W,S5X Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 650V 5.2A TO220SIS	83
TJ40S04M3L,LXHQ Toshiba Electronic Devices and Storage Corporation	MOSFET P-CH 40V 40A DPAK	9721
SSM6J505NU,LF Toshiba Electronic Devices and Storage Corporation	MOSFET P-CH 12V 12A 6UDFNB	5916
TPW4R008NH,L1Q Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 80V 116A 8DSOP	953
SSM3J355R,LF Toshiba Electronic Devices and Storage Corporation	MOSFET P-CH 20V 6A SOT23F	955
TPH5900CNH,L1Q Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 150V 9A 8SOP	0
TK35E10K3(S1SS-Q) Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 100V 35A TO-220AB	0
SSM3J112TU,LF Toshiba Electronic Devices and Storage Corporation	MOSFET P-CH 30V 1.1A UFM	0
TPCA8055-H,LQ(M Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 30V 56A 8SOP	0
TK25A60X5,S5X Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 600V 25A TO220SIS	99
TK3P50D,RQ(S Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 500V 3A DPAK	0
TJ80S04M3L,LXHQ Toshiba Electronic Devices and Storage Corporation	MOSFET P-CH 40V 80A DPAK	5378
SSM3K56CT,L3F Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 20V 800MA CST3	25874
TK31J60W5,S1VQ Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 600V 30.8A TO3P	0
SSM3K324R,LF Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 30V 4A SOT-23F	2975
TJ20S04M3L,LXHQ Toshiba Electronic Devices and Storage Corporation	MOSFET P-CH 40V 20A DPAK	7845
TK56E12N1,S1X Toshiba Electronic Devices and Storage Corporation	MOSFET N CH 120V 56A TO-220	0
TK110A10PL,S4X Toshiba Electronic Devices and Storage Corporation	X35 PB-F POWER MOSFET TRANSISTOR	112
SSM3J351R,LF Toshiba Electronic Devices and Storage Corporation	MOSFET P-CH 60V 3.5A SOT-23F	308
SSM3K7002CFU,LF Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 60V 170MA USM	0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS