Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
STO47N60M6 STMicroelectronics	MOSFET N-CH 600V 36A TOLL	1880
STH300NH02L-6 STMicroelectronics	MOSFET N-CH 24V 180A H2PAK	0
STF3N62K3 STMicroelectronics	MOSFET N-CH 620V 2.7A TO220FP	0
STFI10N62K3 STMicroelectronics	MOSFET N CH 620V 8.4A I2PAKFP	1498
STB24N60DM2 STMicroelectronics	MOSFET N-CH 600V 18A D2PAK	805
STI24N60M6 STMicroelectronics	MOSFET N-CH 600V I2PAK	95
STY60NK30Z STMicroelectronics	MOSFET N-CH 300V 60A MAX247	468
STW48N60DM2 STMicroelectronics	MOSFET N-CH 600V 40A TO247	540
STD30N6LF6AG STMicroelectronics	MOSFET N-CH 60V 24A DPAK	0
STB141NF55 STMicroelectronics	MOSFET N-CH 55V 80A D2PAK	0
STP2N80K5 STMicroelectronics	MOSFET N-CH 800V 2A TO220	1948
STS9NF3LL STMicroelectronics	MOSFET N-CH 30V 9A 8SO	0
STP16NF06L STMicroelectronics	MOSFET N-CH 60V 16A TO220AB	2259
STD12N60M2 STMicroelectronics	MOSFET N-CHANNEL 600V 9A DPAK	0
STW50N65DM2AG STMicroelectronics	MOSFET N-CH 650V 28A TO247	1188
STD3N80K5 STMicroelectronics	MOSFET N-CH 800V 2.5A DPAK	4896
SCTW70N120G2V STMicroelectronics	TRANS SJT N-CH 1200V 91A HIP247	0
STP55NF06FP STMicroelectronics	MOSFET N-CH 60V 50A TO220FP	0
STO36N60M6 STMicroelectronics	MOSFET N-CH 600V 30A TOLL	1667
STF24N60M6 STMicroelectronics	MOSFET N-CH 600V TO220FP	910

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS