Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
STFW6N120K3 STMicroelectronics	MOSFET N-CH 1200V 6A ISOWATT	0
STD15N65M5 STMicroelectronics	MOSFET N CH 650V 11A DPAK	2435
STD25NF10LT4 STMicroelectronics	MOSFET N-CH 100V 25A DPAK	8
STD35P6LLF6 STMicroelectronics	MOSFET P-CH 60V 35A DPAK	0
STD9NM50N STMicroelectronics	MOSFET N-CH 500V 5A DPAK	0
STH12N120K5-2 STMicroelectronics	MOSFET N-CH 1200V 12A H2PAK-2	3837
STS5N15F3 STMicroelectronics	MOSFET N-CH 150V 5A 8SO	0
STU7LN80K5 STMicroelectronics	MOSFET N-CH 800V 5A IPAK	5996
STP6NK90Z STMicroelectronics	MOSFET N-CH 900V 5.8A TO220AB	315
STD45P4LLF6AG STMicroelectronics	MOSFET P-CH 40V 50A DPAK	1369
STW56N65DM2 STMicroelectronics	MOSFET N-CH 650V 48A TO247	0
STB6N60M2 STMicroelectronics	MOSFET N-CH 600V 4.5A D2PAK	0
STP18N55M5 STMicroelectronics	MOSFET N-CH 550V 16A TO220AB	806
STP10N80K5 STMicroelectronics	MOSFET N-CH 800V 9A TO220	0
STP45N60DM2AG STMicroelectronics	MOSFET N-CH 600V 34A TO220	960
STN2NF10 STMicroelectronics	MOSFET N-CH 100V 2.4A SOT-223	15914
STP26N60DM6 STMicroelectronics	MOSFET N-CH 600V 18A TO220	155
STW13N60M2 STMicroelectronics	MOSFET N-CH 600V 11A TO247	0
STI34N65M5 STMicroelectronics	MOSFET N-CH 650V 28A I2PAKFP	0
STI300N4F6 STMicroelectronics	MOSFET N CH 40V 160A I2PAK	0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS