Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
STB120N4LF6 STMicroelectronics	MOSFET N-CH 40V 80A D2PAK	0
STP33N60DM2 STMicroelectronics	MOSFET N-CH 600V 24A TO220	315
STP15N95K5 STMicroelectronics	MOSFET N-CH 950V 12A TO220	671
STP2N62K3 STMicroelectronics	MOSFET N-CH 620V 2.2A TO220	0
STD86N3LH5 STMicroelectronics	MOSFET N-CH 30V 80A DPAK	27147
STWA20N95DK5 STMicroelectronics	MOSFET N-CH 950V 18A TO247	0
STD3NM60N STMicroelectronics	MOSFET N-CH 600V 3.3A DPAK	2409
STP14N80K5 STMicroelectronics	MOSFET N-CHANNEL 800V 12A TO220	0
STP10NK80ZFP STMicroelectronics	MOSFET N-CH 800V 9A TO220FP	381
STB21NM60ND STMicroelectronics	MOSFET N-CH 600V 17A D2PAK	0
STP9NK90Z STMicroelectronics	MOSFET N-CH 900V 8A TO220AB	634
STL7N6LF3 STMicroelectronics	MOSFET N-CH 60V 20A POWERFLAT	5284
STB13NM60N STMicroelectronics	MOSFET N-CH 600V 11A D2PAK	933
STL25N15F3 STMicroelectronics	MOSFET N-CH 150V 25A POWERFLAT	3280
STV200N55F3 STMicroelectronics	MOSFET N-CH 55V 200A 10POWERSO	0
STP14NM65N STMicroelectronics	MOSFET N-CH 650V 12A TO220AB	0
STU3LN62K3 STMicroelectronics	MOSFET N-CH 620V 2.5A IPAK	0
STQ3N45K3-AP STMicroelectronics	MOSFET N-CH 450V 600MA TO92-3	1505
STF7N60DM2 STMicroelectronics	MOSFET N-CH 600V 6A TO220FP	0
STL30N10F7 STMicroelectronics	MOSFET N-CH 100V 30A POWERFLAT	1292

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS