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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
IRFP140PBF

IRFP140PBF

Vishay / Siliconix

MOSFET N-CH 100V 31A TO247-3

469
IPD60R450E6ATMA1

IPD60R450E6ATMA1

IR (Infineon Technologies)

MOSFET N-CH 600V 9.2A TO252-3

9778
IRF6201PBF

IRF6201PBF

IR (Infineon Technologies)

HEXFET POWER MOSFET

910
IXTH90P10P

IXTH90P10P

Wickmann / Littelfuse

MOSFET P-CH 100V 90A TO247

4960660
SIE810DF-T1-GE3

SIE810DF-T1-GE3

Vishay / Siliconix

MOSFET N-CH 20V 60A 10POLARPAK

2000
IRF1010NSTRLPBF

IRF1010NSTRLPBF

IR (Infineon Technologies)

MOSFET N-CH 55V 85A D2PAK

4391
DMT5015LFDF-13

DMT5015LFDF-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 50V 9.1A 6UDFN

0
IPB017N10N5LFATMA1

IPB017N10N5LFATMA1

IR (Infineon Technologies)

MOSFET N-CH 100V 180A TO263-7

0
STF28N65M2

STF28N65M2

STMicroelectronics

MOSFET N-CH 650V 20A TO220FP

0
IXTA140P05T

IXTA140P05T

Wickmann / Littelfuse

MOSFET P-CH 50V 140A TO263

200
NTR4502PT1G

NTR4502PT1G

SMALL SIGNAL FIELD-EFFECT TRANSI

438000
FDP20N50

FDP20N50

Sanyo Semiconductor/ON Semiconductor

MOSFET N-CH 500V 20A TO220-3

5969
MMFT1N10ET3

MMFT1N10ET3

SMALL SIGNAL N-CHANNEL MOSFET

4000
SPD04P10PGBTMA1

SPD04P10PGBTMA1

IR (Infineon Technologies)

MOSFET P-CH 100V 4A TO252-3

7462
SI2301CDS-T1-GE3

SI2301CDS-T1-GE3

Vishay / Siliconix

MOSFET P-CH 20V 3.1A SOT23-3

0
SIHB22N60EL-GE3

SIHB22N60EL-GE3

Vishay / Siliconix

MOSFET N-CH 600V 21A TO263

0
BSP296L6433HTMA1

BSP296L6433HTMA1

IR (Infineon Technologies)

MOSFET N-CH 100V 1.1A SOT223-4

0
BUK7531R-40E127

BUK7531R-40E127

NXP Semiconductors

N-CHANNEL POWER MOSFET

0
FDMC86160ET100

FDMC86160ET100

Sanyo Semiconductor/ON Semiconductor

MOSFET N-CH 100V 9A/43A POWER33

2118
BUK6D120-60PX

BUK6D120-60PX

Nexperia

MOSFET P-CH 60V 3A/8A 6DFN

0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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