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Transistors - FETs, MOSFETs - Single

Image Part Number Description / PDF Quantity Rfq
RFP45N06_NL

RFP45N06_NL

N-CHANNEL POWER MOSFET

0
FCU900N60Z-ND

FCU900N60Z-ND

MOSFET N CH 600V 4.5A IPAK

0
IPD60R950C6ATMA1

IPD60R950C6ATMA1

IR (Infineon Technologies)

MOSFET N-CH 600V 4.4A TO252-3

0
SIS890DN-T1-GE3

SIS890DN-T1-GE3

Vishay / Siliconix

MOSFET N-CH 100V 30A PPAK1212-8

0
FDP047N08-F102

FDP047N08-F102

Sanyo Semiconductor/ON Semiconductor

MOSFET N-CH 75V 164A TO220-3

0
MTA2N60E

MTA2N60E

N-CHANNEL POWER MOSFET

18829
DMT6012LFV-7

DMT6012LFV-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 43.3A PWRDI3333

62000
NTK3134NT5G

NTK3134NT5G

MOSFET N-CH 20V 750MA SOT723

2560000
SCT3080KRC14

SCT3080KRC14

ROHM Semiconductor

SICFET N-CH 1200V 31A TO247-4L

0
2SJ545-E

2SJ545-E

Renesas Electronics America

P-CHANNEL POWER MOSFET

0
DMP2130L-7

DMP2130L-7

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 20V 3A SOT23-3

3370
ATP202-TL-H

ATP202-TL-H

Sanyo Semiconductor/ON Semiconductor

MOSFET N-CH 30V 50A ATPAK

1564
IRF1018ESTRLPBF

IRF1018ESTRLPBF

IR (Infineon Technologies)

MOSFET N-CH 60V 79A D2PAK

0
DMTH69M8LFVW-7

DMTH69M8LFVW-7

Zetex Semiconductors (Diodes Inc.)

MOSFET N-CH 60V 15.9/45.4A PWRDI

0
ZXMP10A17GQTC

ZXMP10A17GQTC

Zetex Semiconductors (Diodes Inc.)

MOSFET P-CH 100V 1.7A SOT223

12000
IXFX80N50P

IXFX80N50P

Wickmann / Littelfuse

MOSFET N-CH 500V 80A PLUS247-3

0
FQI27N25TU-F085

FQI27N25TU-F085

25.5A, 250V, 0.11OHM, N-CHANNEL

4082
IRFR4105TRLPBF

IRFR4105TRLPBF

IR (Infineon Technologies)

MOSFET N-CH 55V 27A DPAK

0
IRF7807ZPBF

IRF7807ZPBF

IR (Infineon Technologies)

MOSFET N-CH 30V 11A 8SO

1710
IXFN132N50P3

IXFN132N50P3

Wickmann / Littelfuse

MOSFET N-CH 500V 112A SOT227B

390

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Junction FET (JFET)Voltage-controlled depletion mode operation, low noiseLow-noise amplifiers, analog switches
Enhancement Mode MOSFETNormally-off device, requires positive VGS to conductPower supplies, motor drives
Depletion Mode MOSFETNormally-on device, requires negative VGS to blockRadio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)Combines MOSFET input with bipolar output, high current capacityHigh-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO2), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

ParameterDescription and Importance
VDS (Drain-Source Voltage)Maximum voltage rating between drain and source; determines breakdown tolerance
ID (Drain Current)Maximum continuous current capacity; critical for power handling
RDS(on)On-state resistance; impacts conduction losses and efficiency
VGS(th) (Threshold Voltage)Voltage required to form channel; determines control signal compatibility
QG (Gate Charge)Charge required for switching; affects switching speed and driver requirements
PD (Power Dissipation)Maximum power handling capability; dictates thermal management needs

5. Application Fields

  • Consumer Electronics: Mobile phone chargers, notebook power adapters
  • Industrial: Motor drives, uninterruptible power supplies (UPS)
  • Automotive: Electric vehicle (EV) battery management systems, HEV inverters
  • Telecommunications: Base station power amplifiers, optical network transceivers
  • Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Features
Texas InstrumentsCSD18534Q5A60V, 4.2m RDS(on), automotive-grade
STMicroelectronicsSTP55NF0655A, 60V, high-speed switching
Infineon TechnologiesIPB041N06N30.41 , 600V, TO-220 package
ON SemiconductorNDS355ANDepletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

  • Voltage and current requirements under operating conditions
  • Thermal performance (RDS(on), package thermal resistance)
  • Switching speed vs. conduction loss trade-off
  • Gate drive compatibility with control circuitry
  • Environmental factors (temperature, vibration, humidity)
  • Cost-performance balance for volume production

8. Industry Trends

Current trends include:

  • Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
  • Advanced packaging technologies (double-sided cooling, copper clip)
  • Integration with gate drivers and protection circuits
  • Miniaturization through trench and shielded gate structures
  • Development of automotive-qualified devices for EVs and ADAS

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