Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - RF

Part Number	Description / PDF	Quantity
CLF1G0060S-30U Ampleon	RF FET HEMT 150V 13DB SOT1227B	24
BLC10G19XS-600AVTZ Ampleon	BLC10G19XS-600AVT/SOT1258/TRAYDP	60
BLA9G1011LS-300U Ampleon	RF MOSFET LDMOS 32V SOT502B	16
BLL6H0514-25,112 Ampleon	RF FET LDMOS 100V 21DB SOT467C	70
BLM8D1822S-50PBY Ampleon	RF MOSFET LDMOS 28V 16-HSOPF	87
BLF178P,112 Ampleon	RF FET LDMOS 110V 28.5DB SOT539A	32
BLP27M810Z Ampleon	RF FET LDMOS 65V 17DB 16VDFN	420
BLS7G2729LS-350P,1 Ampleon	RF FET LDMOS 65V 13DB SOT539B	17
BLC9H10XS-505AZ Ampleon	RF MOSFET	135
BLP15M7160PY Ampleon	RF FET LDMOS 65V 20DB SOT12232	310
BLA9G1011L-300GU Ampleon	RF MOSFET LDMOS 32V SOT502F	60
BLF8G20LS-200V,112 Ampleon	RF FET LDMOS 65V 17DB SOT1120B	60
CLF1G0035-100PU Ampleon	RF MOSFET HEMT 50V LDMOST	17
BLF2425M9L30J Ampleon	RF FET LDMOS 65V 18.5DB SOT1135A	0
BLF2425M9LS140U Ampleon	TRANS RF 140W LDMOST	188
BLF9G38LS-90PU Ampleon	RF FET LDMOS 65V 15DB SOT1121B	34
BLA9H0912L-700U Ampleon	BLA9H0912L-700/SOT502/TRAY	55
BLF7G24LS-140,112 Ampleon	RF MOSFET LDMOS 28V SOT502B	46
BLL1214-35 Ampleon	RF PFET, 1-ELEMENT, L BAND, SILI	0
BLF989ESU Ampleon	BLF989ES/SOT539/TRAY	60

Transistors - FETs, MOSFETs - RF

1. Overview

RF FETs and MOSFETs are critical semiconductor devices designed for high-frequency signal amplification and switching in radio frequency (RF) applications. These transistors operate efficiently in microwave and RF circuits, enabling wireless communication, radar systems, and broadcasting equipment. Their ability to handle high frequencies (typically above 1 MHz) with minimal noise and distortion makes them indispensable in modern telecommunications infrastructure.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
Junction FET (JFET)	Voltage-controlled device with low noise and high input impedance	Low-noise amplifiers in RF receivers
MESFET	Metal-Semiconductor FET with GaAs substrate for high-speed operation	Satellite communication systems
HEMT/PHEMT	High-electron-mobility transistor with pseudomorphic structures	5G base stations, microwave amplifiers
LDMOS	Lateral Diffused MOSFET with high power density and thermal stability	Cellular base station amplifiers
GaN HEMT	Gallium Nitride-based HEMT for ultra-high frequency/power	Radar systems, 5G mmWave

3. Structure and Composition

RF FETs typically feature a three-terminal structure (source, gate, drain) with a semiconductor channel (Si, GaAs, or GaN). The gate region uses Schottky contacts (MESFET) or insulated layers (MOSFET). Advanced devices like HEMTs employ heterojunctions between different semiconductor materials (e.g., AlGaN/GaN) to enhance electron mobility. Packaging includes ceramic or plastic enclosures with RF-compatible connectors to minimize parasitic capacitance and inductance.

4. Key Technical Specifications

Parameter	Description	Importance
Frequency Range	Operational bandwidth (e.g., 0.1-6 GHz)	Determines application suitability
Power Output (P1dB)	1dB compression point (e.g., 10-500W)	Measures linearity and saturation
Gain (S21)	Signal amplification ratio (e.g., 10-30 dB)	System sensitivity indicator
Efficiency (PAE)	Power-added efficiency (e.g., 40-75%)	Energy consumption metric
Input/Output VSWR	Voltage Standing Wave Ratio (e.g., <2:1)	Mismatch loss assessment

5. Application Fields

Telecommunications: 5G/4G base stations, small cells, fiber-optic networks
Defense: Radar systems, electronic warfare, UAV communication
Broadcasting: FM/TV transmitters, satellite uplinks
Medical: MRI machines, RF ablation equipment
Industrial: Plasma generators, RFID readers

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Specifications
NXP Semiconductors	MRF1K50GN	50W GaN HEMT, 1.8-2.7GHz, 70% PAE
Wolfspeed (Cree)	CGH4G090400F	400W GaN HEMT, 900MHz, 10:1 VSWR ruggedness
Infineon	BLS14H10LS-250	250W LDMOS, 1.8-2.2GHz, 14dB gain
MACOM	NPT1007	SiGe HBT, 7GHz, 18dB gain for 5G

7. Selection Recommendations

Match operating frequency to device transition frequency (f_T)
Verify power handling with derating curves under working temperatures
Assess package thermal resistance (R_th) for longevity
Compare S-parameters for impedance matching requirements
Consider ESD protection and ruggedness for field conditions

8. Industry Trends

Key trends include: - Wide bandgap materials (GaN/SiC) enabling higher efficiency (>80%) at mmWave frequencies - 3D packaging for reduced parasitics in 5G massive MIMO systems - Integrated RF frontend modules (FEM) with on-chip matching networks - AI-driven design optimization for complex impedance matching - Growing adoption of GaN-on-diamond substrates for thermal management