Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Arrays

Part Number	Description / PDF	Quantity
MCB40P1200LB-TRR Wickmann / Littelfuse	MCB40P1200LB-TRR	0
MTI145WX100GD-SMD Wickmann / Littelfuse	IGBT MOD MOSFET SIXPACK ISOPLUS	0
IXTL2X180N10T Wickmann / Littelfuse	MOSFET 2N-CH 100V 100A I5-PAK	0
MCB30P1200LB-TUB Wickmann / Littelfuse	MCB30P1200LB-TUB	200
IXFN27N120SK Wickmann / Littelfuse	SICARBIDE-DISCRETE MOSFET SOT-22	0
MMIX2F60N50P3 Wickmann / Littelfuse	MOSFET N-CH	1000
MTC120WX75GD-SMD Wickmann / Littelfuse	IGBT MOD MOSFET SIXPACK ISOPLUS	0
MCB30P1200LB-TRR Wickmann / Littelfuse	MCB30P1200LB-TRR	0
LKK47-06C5 Wickmann / Littelfuse	MOSFET 2N-CH 600V 47A ISOPLUS264	0
MCB20P1200LB-TRR Wickmann / Littelfuse	MCB20P1200LB-TRR	0
FMP26-02P Wickmann / Littelfuse	MOSFET N/P-CH 200V 26A/17A I4PAC	0
VMM1500-0075P Wickmann / Littelfuse	MOSFET 2N-CH 75V 1500A Y3-LI	0
VMM1000-01P Wickmann / Littelfuse	MOSFET 2N-CH 100V 1000A Y3-LI	0
IXTL2X240N055T Wickmann / Littelfuse	MOSFET 2N-CH 55V 140A ISOPLUS I5	0
GWM120-0075P3 Wickmann / Littelfuse	MOSFET 6N-CH 75V 118A ISOPLUS	0
GWM160-0055X1-SL Wickmann / Littelfuse	MOSFET 6N-CH 55V 150A ISOPLUS	0
FMM150-0075P Wickmann / Littelfuse	MOSFET 2N-CH 75V 150A I4-PAC-5	0
GWM100-0085X1-SMD Wickmann / Littelfuse	MOSFET 6N-CH 85V 103A ISOPLUS	0
GWM120-0075P3-SMD SAM Wickmann / Littelfuse	MOSFET 6N-CH 75V 118A ISOPLUS	0
GWM120-0075X1-SL Wickmann / Littelfuse	MOSFET 6N-CH 75V 110A ISOPLUS	0

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
JFET Array	Low noise, high input impedance	Analog switches, RF amplifiers
MOSFET Array (Enhancement)	High switching speed, low on-resistance	Power supplies, motor drivers
MOSFET Array (Depletion)	Normally-on behavior, high durability	Level shifters, analog circuits
HEMT Array	High electron mobility, microwave performance	Satellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

Parameter	Description	Importance
R_DS(on)	On-state resistance	Impacts conduction loss and efficiency
V_DS(max)	Max drain-source voltage	Determines voltage rating
I_D(max)	Max continuous drain current	Defines current handling capability
Q_g	Gate charge	Affects switching speed and driver requirements
Thermal Resistance	Junction-to-ambient resistance	Crucial for thermal management

5. Application Fields

Consumer Electronics: Smartphone power management, audio amplifiers
Automotive: EV battery management systems, 48V DC-DC converters
Industrial: PLCs, motor drives, welding equipment
Telecommunications: Base station RF amplifiers, optical network transceivers
Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

Manufacturer	Representative Products	Key Features
Infineon Technologies	BTS724GX	Smart power MOSFET array with diagnostic functions
STMicroelectronics	IPD90N03S4-01	High-side switch with 90A rating
ON Semiconductor	NVN4080	Automotive-qualified 80V intelligent power array
Nexperia	PMBT2369	High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low R_DS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies