Transistors - Bipolar (BJT) - Single, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
DTA114EEBHZGTL

DTA114EEBHZGTL

ROHM Semiconductor

PNP -100MA -50V DIGITAL TRANSIST

6534

DTC114YMT2L

DTC114YMT2L

ROHM Semiconductor

TRANS PREBIAS NPN 150MW VMT3

6582

DTC144VKAT146

DTC144VKAT146

ROHM Semiconductor

TRANS PREBIAS NPN 200MW SMT3

3444

DTA115EU3T106

DTA115EU3T106

ROHM Semiconductor

DTA115EU3 IS AN DIGITAL TRANSIST

2852

DTA123EU3HZGT106

DTA123EU3HZGT106

ROHM Semiconductor

DTA123EU3 IS AN DIGITAL TRANSIST

3000

DTC115EMT2L

DTC115EMT2L

ROHM Semiconductor

TRANS PREBIAS NPN 150MW VMT3

3189

DTA124XU3HZGT106

DTA124XU3HZGT106

ROHM Semiconductor

DTA124XU3 IS AN DIGITAL TRANSIST

2209

DTC143TMT2L

DTC143TMT2L

ROHM Semiconductor

TRANS PREBIAS NPN 150MW VMT3

8000

DTA124XKAT146

DTA124XKAT146

ROHM Semiconductor

TRANS PREBIAS PNP 200MW SMT3

46

DTA143EEBHZGTL

DTA143EEBHZGTL

ROHM Semiconductor

PNP DIGITAL TRANSISTOR (WITH BUI

3000

DTA015TMT2L

DTA015TMT2L

ROHM Semiconductor

TRANS PREBIAS PNP 50V VMT3

7947

DTC124XCAHZGT116

DTC124XCAHZGT116

ROHM Semiconductor

NPN 100MA 50V DIGITAL TRANSISTOR

2894

DTC643TKT146

DTC643TKT146

ROHM Semiconductor

TRANS PREBIAS NPN 200MW SMT3

4608

DTA124EUBTL

DTA124EUBTL

ROHM Semiconductor

TRANS PREBIAS PNP 200MW UMT3F

2180

DTA144WETL

DTA144WETL

ROHM Semiconductor

TRANS PREBIAS PNP 150MW EMT3

2851

DTD543ZETL

DTD543ZETL

ROHM Semiconductor

TRANS PREBIAS NPN 150MW EMT3

23

DTC115EKAT146

DTC115EKAT146

ROHM Semiconductor

TRANS PREBIAS NPN 200MW SMT3

2939

DTA114EMFHAT2L

DTA114EMFHAT2L

ROHM Semiconductor

DIGITAL TRANSISTOR PNP 50V 100MA

7965

DTC125TKAT146

DTC125TKAT146

ROHM Semiconductor

TRANS PREBIAS NPN 200MW SMT3

0

DTC115GKAT146

DTC115GKAT146

ROHM Semiconductor

TRANS PREBIAS NPN 200MW SMT3

2699

Transistors - Bipolar (BJT) - Single, Pre-Biased

1. Overview

Pre-biased bipolar junction transistors (BJTs) are discrete semiconductor devices with integrated biasing resistors, designed to simplify circuit design and improve operational stability. Unlike standard BJTs requiring external biasing components, pre-biased BJTs incorporate internal resistors to set the base-emitter voltage and collector current. These devices are critical in modern electronics for applications demanding compact design, consistent performance, and reduced component count. Their ability to maintain stable operation under varying temperature and voltage conditions makes them essential in consumer electronics, industrial automation, and automotive systems.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN Pre-Biased BJTPositive bias resistor network, low-side switchingLogic-level switching, LED drivers
PNP Pre-Biased BJTNegative bias resistor network, high-side switchingPower supply control, relay drivers
Digital TransistorIntegrated resistors with ESD protectionDigital logic circuits, portable devices

3. Structure and Composition

Pre-biased BJTs consist of a silicon semiconductor die with three doped regions (emitter, base, collector) forming two p-n junctions. The key structural elements include: - Monolithic Resistor Network: Thin-film or diffused resistors embedded in the die for fixed biasing - Metal Contacts: Aluminum or copper layers for external connections - Encapsulation: Plastic or ceramic packaging with standard pinouts (e.g., SOT-23, TO-92) - Passivation Layer: Silicon dioxide/nitride coating to prevent surface contamination

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base currentDetermines amplification capability
Max Collector Voltage (VCEO)Max voltage across collector-emitterDefines operating voltage range
Transition Frequency (fT)Frequency response limitCritical for RF and switching applications
Power Dissipation (Ptot)Max thermal power handlingDictates thermal management needs
Built-in Resistor Ratio (R1/R2)Internal resistor division ratioControls bias point stability

5. Application Areas

Main industries and typical equipment: - Consumer Electronics: Mobile phone chargers, wearable devices - Industrial Automation: PLC modules, motor drivers - Automotive: Sensor interfaces, LED lighting systems - Telecommunications: Base station power amplifiers - Power Management: DC-DC converter switches

6. Leading Manufacturers and Products

ManufacturerKey ProductsFeatures
ON SemiconductorMMBT3904L200mA NPN transistor with 47k bias resistors
Toshiba2SB1958PNP device with built-in 10k /4.7k resistor network
STMicroelectronicsSM6T120NAutomotive-grade digital transistor with ESD protection

7. Selection Guidelines

Key considerations: - Match hFE with required amplification/saturation characteristics - Confirm VCEO rating exceeds circuit voltage requirements - Select resistor ratios for desired bias point (e.g., R1=10k , R2=22k for mid-range bias) - Prioritize thermal performance in high-power applications - Consider package type (SMD vs. through-hole) for PCB constraints

8. Industry Trends

Emerging trends include: - Miniaturization: Development of 0.4mm pitch WLCSP packages - Integrated protection: ESD/clamp diodes in standard designs - High-frequency variants: fT > 5GHz for 5G infrastructure - Automotive qualification: Increased demand for AEC-Q101 certified devices - Green manufacturing: Lead-free packaging and low-toxicity materials

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