Transistors - Bipolar (BJT) - Single, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
DTC023YEBTL

DTC023YEBTL

ROHM Semiconductor

TRANS PREBIAS NPN 50V EMT3F

1871

DTA023JEBTL

DTA023JEBTL

ROHM Semiconductor

TRANS PREBIAS PNP 50V 0.15W SC89

1380

DTC024EMT2L

DTC024EMT2L

ROHM Semiconductor

TRANS PREBIAS NPN 50V VMT3

1957

DTA044EEBTL

DTA044EEBTL

ROHM Semiconductor

TRANS PREBIAS PNP 50V 0.15W SC89

1

DTA023JUBTL

DTA023JUBTL

ROHM Semiconductor

TRANS PREBIAS PNP 50V 0.2W UMT3F

1210

DTA114YUBTL

DTA114YUBTL

ROHM Semiconductor

TRANS PREBIAS PNP 200MW UMT3F

2735

DTC143ZU3T106

DTC143ZU3T106

ROHM Semiconductor

NPN 100MA 50V DIGITAL TRANSISTOR

1090

DTC143ZU3HZGT106

DTC143ZU3HZGT106

ROHM Semiconductor

DTC143ZU3HZG IS A DIGITAL TRANSI

267

DTA114TETL

DTA114TETL

ROHM Semiconductor

TRANS PREBIAS PNP 150MW EMT3

16787

DTA043ZUBTL

DTA043ZUBTL

ROHM Semiconductor

TRANS PREBIAS PNP 50V 0.2W UMT3F

330

DTC143TUAT106

DTC143TUAT106

ROHM Semiconductor

TRANS PREBIAS NPN 200MW UMT3

217

DTC114YUAT106

DTC114YUAT106

ROHM Semiconductor

TRANS PREBIAS NPN 200MW UMT3

950

DTA124XMT2L

DTA124XMT2L

ROHM Semiconductor

TRANS PREBIAS PNP 150MW VMT3

7621

DTC114TETL

DTC114TETL

ROHM Semiconductor

TRANS PREBIAS NPN 150MW EMT3

2032

DTB743EETL

DTB743EETL

ROHM Semiconductor

TRANS PREBIAS PNP 150MW EMT3

150

DTB743EMT2L

DTB743EMT2L

ROHM Semiconductor

TRANS PREBIAS PNP 150MW VMT3

0

DTC115TCAT116

DTC115TCAT116

ROHM Semiconductor

DTC115TCA IS AN DIGITAL TRANSIST

3000

DTA023JMT2L

DTA023JMT2L

ROHM Semiconductor

TRANS PREBIAS PNP 50V VMT3F

7803

DTC115TETL

DTC115TETL

ROHM Semiconductor

TRANS PREBIAS NPN 150MW EMT3

5250

DTA123EMFHAT2L

DTA123EMFHAT2L

ROHM Semiconductor

PNP DIGITAL TRANSISTOR (WITH BUI

7740

Transistors - Bipolar (BJT) - Single, Pre-Biased

1. Overview

Pre-biased bipolar junction transistors (BJTs) are discrete semiconductor devices with integrated biasing resistors, designed to simplify circuit design and improve operational stability. Unlike standard BJTs requiring external biasing components, pre-biased BJTs incorporate internal resistors to set the base-emitter voltage and collector current. These devices are critical in modern electronics for applications demanding compact design, consistent performance, and reduced component count. Their ability to maintain stable operation under varying temperature and voltage conditions makes them essential in consumer electronics, industrial automation, and automotive systems.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN Pre-Biased BJTPositive bias resistor network, low-side switchingLogic-level switching, LED drivers
PNP Pre-Biased BJTNegative bias resistor network, high-side switchingPower supply control, relay drivers
Digital TransistorIntegrated resistors with ESD protectionDigital logic circuits, portable devices

3. Structure and Composition

Pre-biased BJTs consist of a silicon semiconductor die with three doped regions (emitter, base, collector) forming two p-n junctions. The key structural elements include: - Monolithic Resistor Network: Thin-film or diffused resistors embedded in the die for fixed biasing - Metal Contacts: Aluminum or copper layers for external connections - Encapsulation: Plastic or ceramic packaging with standard pinouts (e.g., SOT-23, TO-92) - Passivation Layer: Silicon dioxide/nitride coating to prevent surface contamination

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base currentDetermines amplification capability
Max Collector Voltage (VCEO)Max voltage across collector-emitterDefines operating voltage range
Transition Frequency (fT)Frequency response limitCritical for RF and switching applications
Power Dissipation (Ptot)Max thermal power handlingDictates thermal management needs
Built-in Resistor Ratio (R1/R2)Internal resistor division ratioControls bias point stability

5. Application Areas

Main industries and typical equipment: - Consumer Electronics: Mobile phone chargers, wearable devices - Industrial Automation: PLC modules, motor drivers - Automotive: Sensor interfaces, LED lighting systems - Telecommunications: Base station power amplifiers - Power Management: DC-DC converter switches

6. Leading Manufacturers and Products

ManufacturerKey ProductsFeatures
ON SemiconductorMMBT3904L200mA NPN transistor with 47k bias resistors
Toshiba2SB1958PNP device with built-in 10k /4.7k resistor network
STMicroelectronicsSM6T120NAutomotive-grade digital transistor with ESD protection

7. Selection Guidelines

Key considerations: - Match hFE with required amplification/saturation characteristics - Confirm VCEO rating exceeds circuit voltage requirements - Select resistor ratios for desired bias point (e.g., R1=10k , R2=22k for mid-range bias) - Prioritize thermal performance in high-power applications - Consider package type (SMD vs. through-hole) for PCB constraints

8. Industry Trends

Emerging trends include: - Miniaturization: Development of 0.4mm pitch WLCSP packages - Integrated protection: ESD/clamp diodes in standard designs - High-frequency variants: fT > 5GHz for 5G infrastructure - Automotive qualification: Increased demand for AEC-Q101 certified devices - Green manufacturing: Lead-free packaging and low-toxicity materials

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