Transistors - Bipolar (BJT) - Single, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
DTC043TUBTL

DTC043TUBTL

ROHM Semiconductor

TRANS PREBIAS NPN 50V UMT3F

434

NSVMMUN2131LT1G

NSVMMUN2131LT1G

SMALL SIGNAL BIPOLAR TRANSISTOR,

103000

DTA144TET1G

DTA144TET1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS PNP 50V 100MA SC75

0

MUN2114T1G

MUN2114T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS PNP 50V 100MA SC59

852948000

BCR185WH6327

BCR185WH6327

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

53635

DTC143XEFRATL

DTC143XEFRATL

ROHM Semiconductor

NPN DIGITAL TRANSISTOR (CORRESPO

3000

PDTA114EE,115

PDTA114EE,115

NXP Semiconductors

0.1A, 50V, PNP

0

RN2113MFV,L3F

RN2113MFV,L3F

Toshiba Electronic Devices and Storage Corporation

TRANS PREBIAS PNP 50V 0.1A VESM

8000

DTC114YCA-TP

DTC114YCA-TP

Micro Commercial Components (MCC)

TRANS PREBIAS NPN 200MW SOT23

0

PDTC115EM,315

PDTC115EM,315

Nexperia

TRANS PREBIAS NPN 50V DFN1006-3

0

MMUN2233LT1

MMUN2233LT1

TRANS PREBIAS NPN 246MW SOT23-3

9000

DRC5114W0L

DRC5114W0L

Panasonic

TRANS PREBIAS NPN 150MW SMINI3

5985

DTC144TUA-TP

DTC144TUA-TP

Micro Commercial Components (MCC)

TRANS PREBIAS NPN 200MW SOT323

0

DDTA124XCA-7-F

DDTA124XCA-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS PNP 200MW SOT23-3

512378000

DTB743XETL

DTB743XETL

ROHM Semiconductor

TRANS PREBIAS PNP 150MW EMT3

0

DRA2124E0L

DRA2124E0L

Panasonic

TRANS PREBIAS PNP 200MW MINI3

76

DTD723YMT2L

DTD723YMT2L

ROHM Semiconductor

TRANS PREBIAS NPN 150MW VMT3

3351

DTC143XUBTL

DTC143XUBTL

ROHM Semiconductor

TRANS PREBIAS NPN 200MW UMT3F

2990

UNR31A400L

UNR31A400L

Panasonic

TRANS PREBIAS PNP 100MW SSSMINI3

9746

MUN5213T1G

MUN5213T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS NPN 50V SC70-3

26106

Transistors - Bipolar (BJT) - Single, Pre-Biased

1. Overview

Pre-biased bipolar junction transistors (BJTs) are discrete semiconductor devices with integrated biasing resistors, designed to simplify circuit design and improve operational stability. Unlike standard BJTs requiring external biasing components, pre-biased BJTs incorporate internal resistors to set the base-emitter voltage and collector current. These devices are critical in modern electronics for applications demanding compact design, consistent performance, and reduced component count. Their ability to maintain stable operation under varying temperature and voltage conditions makes them essential in consumer electronics, industrial automation, and automotive systems.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN Pre-Biased BJTPositive bias resistor network, low-side switchingLogic-level switching, LED drivers
PNP Pre-Biased BJTNegative bias resistor network, high-side switchingPower supply control, relay drivers
Digital TransistorIntegrated resistors with ESD protectionDigital logic circuits, portable devices

3. Structure and Composition

Pre-biased BJTs consist of a silicon semiconductor die with three doped regions (emitter, base, collector) forming two p-n junctions. The key structural elements include: - Monolithic Resistor Network: Thin-film or diffused resistors embedded in the die for fixed biasing - Metal Contacts: Aluminum or copper layers for external connections - Encapsulation: Plastic or ceramic packaging with standard pinouts (e.g., SOT-23, TO-92) - Passivation Layer: Silicon dioxide/nitride coating to prevent surface contamination

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base currentDetermines amplification capability
Max Collector Voltage (VCEO)Max voltage across collector-emitterDefines operating voltage range
Transition Frequency (fT)Frequency response limitCritical for RF and switching applications
Power Dissipation (Ptot)Max thermal power handlingDictates thermal management needs
Built-in Resistor Ratio (R1/R2)Internal resistor division ratioControls bias point stability

5. Application Areas

Main industries and typical equipment: - Consumer Electronics: Mobile phone chargers, wearable devices - Industrial Automation: PLC modules, motor drivers - Automotive: Sensor interfaces, LED lighting systems - Telecommunications: Base station power amplifiers - Power Management: DC-DC converter switches

6. Leading Manufacturers and Products

ManufacturerKey ProductsFeatures
ON SemiconductorMMBT3904L200mA NPN transistor with 47k bias resistors
Toshiba2SB1958PNP device with built-in 10k /4.7k resistor network
STMicroelectronicsSM6T120NAutomotive-grade digital transistor with ESD protection

7. Selection Guidelines

Key considerations: - Match hFE with required amplification/saturation characteristics - Confirm VCEO rating exceeds circuit voltage requirements - Select resistor ratios for desired bias point (e.g., R1=10k , R2=22k for mid-range bias) - Prioritize thermal performance in high-power applications - Consider package type (SMD vs. through-hole) for PCB constraints

8. Industry Trends

Emerging trends include: - Miniaturization: Development of 0.4mm pitch WLCSP packages - Integrated protection: ESD/clamp diodes in standard designs - High-frequency variants: fT > 5GHz for 5G infrastructure - Automotive qualification: Increased demand for AEC-Q101 certified devices - Green manufacturing: Lead-free packaging and low-toxicity materials

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