Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BC51-16PA,115

BC51-16PA,115

Nexperia

TRANS PNP 45V 1A 3HUSON

0

BCP56-10,115

BCP56-10,115

Nexperia

TRANS NPN 80V 1A SOT223

720

BC807K-25VL

BC807K-25VL

Nexperia

BC807K - 45V, 500MA PNP GENERAL-

30000

MMBT2222A,215

MMBT2222A,215

Nexperia

TRANS NPN 40V 600MA TO236AB

26932

BC68-25PA,115

BC68-25PA,115

Nexperia

TRANS NPN 20V 2A 3HUSON

21

BSP32,115

BSP32,115

Nexperia

TRANS PNP 80V 1A SOT223

0

BC817K-16R

BC817K-16R

Nexperia

BC817K - 45V, 500MA NPN GENERAL-

36000

BCP53-16,135

BCP53-16,135

Nexperia

TRANS PNP 80V 1A SOT223

740

PBSS9110Z,135

PBSS9110Z,135

Nexperia

TRANS PNP 100V 1A SOT223

13709

BCX56-16,147

BCX56-16,147

Nexperia

TRANS NPN 80V 1A SOT89

4350

BC52-16PA,115

BC52-16PA,115

Nexperia

TRANS PNP 60V 1A 3HUSON

4813

BC847CMB,315

BC847CMB,315

Nexperia

TRANS NPN 45V 100MA DFN1006B-3

0

BC817-16QCZ

BC817-16QCZ

Nexperia

BC817-16QC/SOT8009/DFN1412D-3

5000

PBSS302ND,115

PBSS302ND,115

Nexperia

TRANS NPN 40V 4A 6TSOP

0

PHPT60603NYX

PHPT60603NYX

Nexperia

TRANS NPN 60V 3A LFPAK56

5835

PBSS304NZ,135

PBSS304NZ,135

Nexperia

TRANS NPN 60V 5.2A SOT-223

2530

BC860B,235

BC860B,235

Nexperia

TRANS PNP 45V 100MA TO236AB

0

PXT2222A,115

PXT2222A,115

Nexperia

TRANS NPN 40V 0.1A SOT89

10369

PBHV8540X,115

PBHV8540X,115

Nexperia

TRANS NPN 400V 0.5A SOT89

87

BCX51-16,135

BCX51-16,135

Nexperia

TRANS PNP 45V 1A SOT89

2107

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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