Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
PBSS4140U,115

PBSS4140U,115

Nexperia

TRANS NPN 40V 1A SOT323

12984

PBHV9540XF

PBHV9540XF

Nexperia

PBHV9540X/SOT89/MPT3

0

BC817-25W,115

BC817-25W,115

Nexperia

TRANS NPN 45V 500MA SOT323

6113

PMST2907A,115

PMST2907A,115

Nexperia

TRANS PNP 60V 600MA SOT323

19596

BC807-40,215

BC807-40,215

Nexperia

TRANS PNP 45V 500MA TO236AB

1595

BC807K-16R

BC807K-16R

Nexperia

BC807K - 45V, 500MA PNP GENERAL-

138000

BC807-40QCZ

BC807-40QCZ

Nexperia

BC807-40QC/SOT8009/DFN1412D-3

0

BC849B,215

BC849B,215

Nexperia

TRANS NPN 30V 100MA TO236AB

5983

BC807-16LVL

BC807-16LVL

Nexperia

BC807-16L/SOT23/TO-236AB

0

PBSS5540X,135

PBSS5540X,135

Nexperia

TRANS PNP 40V 4A SOT89

11834

PMBTA92,215

PMBTA92,215

Nexperia

TRANS PNP 300V 100MA TO236AB

7922

BC807-25W,135

BC807-25W,135

Nexperia

NOW NEXPERIA BC807-25W - SMALL S

20000

MMBTA42,215

MMBTA42,215

Nexperia

TRANS NPN 300V 0.1A SOT23

3844

BF840,235

BF840,235

Nexperia

TRANS NPN 40V 0.025A SOT23

3517

BCP54-16TF

BCP54-16TF

Nexperia

BCP54-16T/SOT223/SC-73

0

BC816-16R

BC816-16R

Nexperia

BC816-16/SOT23/TO-236AB

2850

PBSS5420D,115

PBSS5420D,115

Nexperia

TRANS PNP 20V 4A 6TSOP

3000

BC857BW/ZL115

BC857BW/ZL115

Nexperia

SMALL SIGNAL BIPOLAR TRANSISTOR

705000

BC56-10PA,115

BC56-10PA,115

Nexperia

TRANS NPN 80V 1A 3HUSON

0

PMBT5550,215

PMBT5550,215

Nexperia

TRANS NPN 140V 0.3A SOT23

10130

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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