Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
2PB1219AR,135

2PB1219AR,135

Nexperia

TRANS PNP 50V 0.5A SOT323

0

PBSS5240XF

PBSS5240XF

Nexperia

TRANS PNP 40V 2A SOT89

6164

BC849B,235

BC849B,235

Nexperia

TRANS NPN 30V 0.1A SOT23

0

BC860BW,135

BC860BW,135

Nexperia

TRANS PNP 45V 0.1A SOT323

0

PUMH9/ZL115

PUMH9/ZL115

Nexperia

SMALL SIGNAL BIPOLAR TRANSISTOR

9000

BCW66HR

BCW66HR

Nexperia

BCW66HSOT23TO-236AB

2288

BC53PASX

BC53PASX

Nexperia

IC TRANS PNP 1A 80V SOT1061

8653

2PB709ART,215

2PB709ART,215

Nexperia

TRANS PNP 45V 100MA TO236AB

5656

PBSS4160XF

PBSS4160XF

Nexperia

PBSS4160X/SOT89/MPT3

0

PHPT60415PY,115

PHPT60415PY,115

Nexperia

POWER BIPOLAR TRANSISTOR

0

BC807,215

BC807,215

Nexperia

TRANS PNP 45V 500MA TO236AB

15631

PMSTA42,115

PMSTA42,115

Nexperia

TRANS NPN 300V 0.1A SOT323

6762

2PB709ARL,215

2PB709ARL,215

Nexperia

NOW NEXPERIA 2PB709ARL - SMALL S

202532

PBSS4540Z,115

PBSS4540Z,115

Nexperia

TRANS NPN 40V 5A SOT223

14140

PBSS4160T,215

PBSS4160T,215

Nexperia

TRANS NPN 60V 1A TO236AB

19072

PBSS4320T,215

PBSS4320T,215

Nexperia

TRANS NPN 20V 2A TO236AB

454

BC846BQCZ

BC846BQCZ

Nexperia

BC846BQC/SOT8009/DFN1412D-3

5000

BCP53-10HX

BCP53-10HX

Nexperia

TRANS PNP 80V 1A SOT223

18

PMST2369,135

PMST2369,135

Nexperia

TRANS NPN 15V 200MA SOT323

0

2PB1219AS,135

2PB1219AS,135

Nexperia

TRANS PNP 50V 0.5A SOT323

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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