Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BC807-40QAZ

BC807-40QAZ

Nexperia

TRANS PNP 45V 0.5A DFN1010D-3

0

BC847CM,315

BC847CM,315

Nexperia

NOW NEXPERIA BC847CM - SMALL SIG

0

PMST5551,115

PMST5551,115

Nexperia

TRANS NPN 160V 300MA SOT323

2172

PHPT61010PY,115

PHPT61010PY,115

Nexperia

POWER BIPOLAR TRANSISTOR

0

PHPT60406PYX

PHPT60406PYX

Nexperia

TRANS PNP BIPO 40V 6A 8LFPAK

823

PBSS4041PT,215

PBSS4041PT,215

Nexperia

TRANS PNP 60V 2.7A TO236AB

100

PHPT61003PY,115

PHPT61003PY,115

Nexperia

POWER BIPOLAR TRANSISTOR

1500

BF720,115

BF720,115

Nexperia

TRANS NPN 300V 0.1A SOT223

1004

BC816-16HR

BC816-16HR

Nexperia

BC816-16H/SOT23/TO-236AB

2929

BCP56-16TX

BCP56-16TX

Nexperia

TRANS NPN 80V 1A SOT223

1394

PBSS4250X,115

PBSS4250X,115

Nexperia

TRANS NPN 50V 2A SOT89

372

PBSS306NZ,135

PBSS306NZ,135

Nexperia

TRANS NPN 100V 5.1A SOT223

5842

PMSS3904,115

PMSS3904,115

Nexperia

TRANS NPN 40V 100MA SOT323

6473

BCX55-10,115

BCX55-10,115

Nexperia

TRANS NPN 60V 1A SOT89

954

BSP50,115

BSP50,115

Nexperia

TRANS NPN DARL 45V 1A SOT223

781

BF622,115

BF622,115

Nexperia

TRANS NPN 250V 0.05A SOT89

48

BCX52-10,115

BCX52-10,115

Nexperia

TRANS PNP 60V 1A SOT89

3671

PHPT60410PY,115

PHPT60410PY,115

Nexperia

POWER BIPOLAR TRANSISTOR

0

BCP56H,115

BCP56H,115

Nexperia

SMALL SIGNAL BIPOLAR TRANSISTOR

13000

PBSS5350TVL

PBSS5350TVL

Nexperia

PBSS5350T/SOT23/TO-236AB

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
RFQ BOM Call Skype Email
Top