Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
MJL4281AG

MJL4281AG

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 350V 15A TO264

3625

BD441G

BD441G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 80V 4A TO225AA

22212500

TIP121TU

TIP121TU

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 80V 5A TO220-3

24693000

2SC5706-TL-H

2SC5706-TL-H

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 50V 5A TPFA

150123800

MJD350T4G

MJD350T4G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 300V 500MA DPAK

5276

MJ14002G

MJ14002G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 80V 60A TO3

213

2N5550TFR

2N5550TFR

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 140V 600MA TO92-3

7471

2SC5706-E

2SC5706-E

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 50V 5A TP

264547500

MMBTA05LT1G

MMBTA05LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 60V 500MA SOT23-3

52255

BC856ALT1G

BC856ALT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 65V 100MA SOT23-3

2178

BC856BWT1G

BC856BWT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 65V 100MA SC70-3

4911

MMBTA64LT1G

MMBTA64LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP DARL 30V 500MA SOT23-3

26366

MJE5730G

MJE5730G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 300V 1A TO220AB

562

2SA1943RTU

2SA1943RTU

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 250V 17A TO264-3

2721125

KSP42TA

KSP42TA

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 300V 500MA TO92-3

0

MJ15023G

MJ15023G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 200V 16A TO204

1461

SMMBT2222ALT3G

SMMBT2222ALT3G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 40V 0.6A SOT-23

2357

FJPF3305H2TU

FJPF3305H2TU

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 400V 4A TO220F

4934000

2SC3649T-TD-E

2SC3649T-TD-E

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 160V 1.5A PCP

1692

FJV1845FMTF

FJV1845FMTF

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 120V 50MA SOT23-3

3275

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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