Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
JAN2N4033UB

JAN2N4033UB

Roving Networks / Microchip Technology

TRANS PNP 80V 1A

0

JANTX2N6299

JANTX2N6299

Roving Networks / Microchip Technology

TRANS PNP DARL 80V 8A TO-66

0

JANTX2N930

JANTX2N930

Roving Networks / Microchip Technology

TRANS NPN 45V 0.03A

18

JANTX2N5339

JANTX2N5339

Roving Networks / Microchip Technology

PNP TRANSISTOR

0

2N6352

2N6352

Roving Networks / Microchip Technology

NPN TRANSISTOR

0

2N6275

2N6275

Roving Networks / Microchip Technology

NPN TRANSISTOR

0

JANTX2N6051

JANTX2N6051

Roving Networks / Microchip Technology

TRANS PNP DARL 80V 12A TO-3

0

JANTXV2N3637

JANTXV2N3637

Roving Networks / Microchip Technology

TRANS PNP 175V 1A TO-39

0

JANTX2N3419

JANTX2N3419

Roving Networks / Microchip Technology

TRANS NPN 80V 3A

0

JANSR2N3440

JANSR2N3440

Roving Networks / Microchip Technology

RH POWER BJT

0

JANTXV2N3767

JANTXV2N3767

Roving Networks / Microchip Technology

TRANS NPN 80V 4A

0

JANTXV2N3440

JANTXV2N3440

Roving Networks / Microchip Technology

TRANS NPN 250V 1A

0

2N6650

2N6650

Roving Networks / Microchip Technology

PNP TRANSISTOR

0

2N3439UA

2N3439UA

Roving Networks / Microchip Technology

TRANS NPN 350V 1A UA

0

2N333A

2N333A

Roving Networks / Microchip Technology

TRANS NPN 45V 10MA TO5

0

JANTX2N2907A

JANTX2N2907A

Roving Networks / Microchip Technology

TRANS PNP 60V 0.6A TO18

2205

JANTX2N3637

JANTX2N3637

Roving Networks / Microchip Technology

TRANS PNP 175V 1A TO-39

0

JANTX2N3439UA

JANTX2N3439UA

Roving Networks / Microchip Technology

TRANS NPN 350V 1A UA

0

2N5339

2N5339

Roving Networks / Microchip Technology

NPN TRANSISTOR

0

2N335A

2N335A

Roving Networks / Microchip Technology

TRANS NPN 45V 10MA

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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