Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
2N2605UB

2N2605UB

Roving Networks / Microchip Technology

NPN TRANSISTOR

0

2N6230

2N6230

Roving Networks / Microchip Technology

PNP POWER TRANSISTOR SILICON AMP

0

2N5840

2N5840

Roving Networks / Microchip Technology

NPN TRANSISTOR

0

2N3725UB

2N3725UB

Roving Networks / Microchip Technology

TRANS NPN 50V 500MA

0

2N5581

2N5581

Roving Networks / Microchip Technology

TRANS NPN 50V 0.8A TO46

0

2N3763L

2N3763L

Roving Networks / Microchip Technology

PNP TRANSISTOR

0

JANSF2N2222A

JANSF2N2222A

Roving Networks / Microchip Technology

SMALL-SIGNAL BJT

0

JANS2N2907A

JANS2N2907A

Roving Networks / Microchip Technology

TRANS PNP 60V 0.6A TO18

18

2N2369A

2N2369A

Roving Networks / Microchip Technology

TRANS NPN 15V TO18

0

JAN2N2906AL

JAN2N2906AL

Roving Networks / Microchip Technology

TRANS PNP 60V 0.6A

0

2N3735

2N3735

Roving Networks / Microchip Technology

TRANS NPN 40V 1.5A TO-39

110

2N3716

2N3716

Roving Networks / Microchip Technology

NPN POWER SILICON TRANSISTORS

0

JANTX2N5238

JANTX2N5238

Roving Networks / Microchip Technology

TRANS NPN 170V 10A TO5

0

JANTX2N3700

JANTX2N3700

Roving Networks / Microchip Technology

TRANS NPN 80V 1A

0

JANTX2N5303

JANTX2N5303

Roving Networks / Microchip Technology

TRANS NPN 80V 20A TO-3

0

JANSF2N2222AL

JANSF2N2222AL

Roving Networks / Microchip Technology

NPN TRANSISTOR

0

JANS2N2905A

JANS2N2905A

Roving Networks / Microchip Technology

TRANS PNP 60V 0.6A TO-39

0

JANTXV2N3420

JANTXV2N3420

Roving Networks / Microchip Technology

TRANS NPN 60V 3A

0

JANTXV2N3440L

JANTXV2N3440L

Roving Networks / Microchip Technology

TRANS NPN 250V 1A

0

JANTX2N2907AUA

JANTX2N2907AUA

Roving Networks / Microchip Technology

TRANS PNP 60V 0.6A

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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