Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BCR583

BCR583

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

966990

SMBTA14E6327

SMBTA14E6327

IR (Infineon Technologies)

TRANSISTOR DARLINGTON NPN 30V

210081

SMBTA06E6433HTMA1

SMBTA06E6433HTMA1

IR (Infineon Technologies)

TRANS NPN 80V 0.5A SOT-23

0

BC848CE6327

BC848CE6327

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

48520

BCW67C

BCW67C

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

176900

BCX52-16E6327

BCX52-16E6327

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

10500

BDP948H6433XTMA1

BDP948H6433XTMA1

IR (Infineon Technologies)

BDP948 - BIPOLAR (BJT) TRANSISTO

16000

BCW65A

BCW65A

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

21000

IPA60R299CP

IPA60R299CP

IR (Infineon Technologies)

600V COOLMOS POWER TRANSISTOR

0

BC860CWH6327

BC860CWH6327

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

51000

BCP5116H6433XTMA1

BCP5116H6433XTMA1

IR (Infineon Technologies)

TRANS PNP 45V 1A SOT223

0

BCX51E6327

BCX51E6327

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

67400

BCW67BE6327

BCW67BE6327

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

9000

BCX54-16E6327

BCX54-16E6327

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

125980

BC848BW

BC848BW

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

0

BC847AE6327

BC847AE6327

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

73499

BC846SE6327

BC846SE6327

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

0

BCX70JE6327

BCX70JE6327

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

88700

BC817K25E6327HTSA1

BC817K25E6327HTSA1

IR (Infineon Technologies)

TRANS NPN 45V 500MA SOT23-3

188605

BCX53-16-E6433

BCX53-16-E6433

IR (Infineon Technologies)

SMALL SIGNAL BIPOLAR TRANSISTOR

2000

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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