Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BC856BT,115

BC856BT,115

NXP Semiconductors

BC856T; BC857T SERIES - PNP GENE

3000

2PA1576R/ZL115

2PA1576R/ZL115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANS PNP

2421000

BLA6G1011L-200RG112

BLA6G1011L-200RG112

NXP Semiconductors

POWER LDMOS TRANSISTOR, SOT502 (

40

BC856B/DG/B3235

BC856B/DG/B3235

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

230000

BCP53-10T115

BCP53-10T115

NXP Semiconductors

POWER BIPOLAR TRANSISTOR

267000

PMST6428,115

PMST6428,115

NXP Semiconductors

NOW NEXPERIA PMST6428 - SMALL SI

90000

PUMH2/L135

PUMH2/L135

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

212000

PMBTA44/HV215

PMBTA44/HV215

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

BSR16/DG/B3215

BSR16/DG/B3215

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

36000

PMBT2222AYS115

PMBT2222AYS115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

19268

PHPT61006NY115

PHPT61006NY115

NXP Semiconductors

POWER BIPOLAR TRANSISTOR NPN

0

BUJD203A,127

BUJD203A,127

NXP Semiconductors

NOW WEEN - BUJD203A - POWER BIPO

1499

PDTB123YT/APG215

PDTB123YT/APG215

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

10170

PMBT4403/DLTR

PMBT4403/DLTR

NXP Semiconductors

PMBT4403 - PNP SWITCHING TRANSIS

810000

BC857C/DG/B4235

BC857C/DG/B4235

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

20000

PBSS4021SP

PBSS4021SP

NXP Semiconductors

POWER BIPOLAR TRANSISTOR

0

BC847CW/DG/B2115

BC847CW/DG/B2115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

147000

PBR941

PBR941

NXP Semiconductors

UHF WIDEBAND TRANSISTOR

0

CLF1G0035S-100

CLF1G0035S-100

NXP Semiconductors

RF POWER FIELD-EFFECT TRANSISTOR

66

PHPT60410NY115

PHPT60410NY115

NXP Semiconductors

POWER BIPOLAR TRANSISTOR NPN

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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