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Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
FMMT558QTA

FMMT558QTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 400V 0.15A SOT23

7559
ZTX560

ZTX560

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 500V 0.15A E-LINE

473916000
BC846A-7-F

BC846A-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 65V 0.1A SOT23-3

51669
ZXTP718MATA

ZXTP718MATA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 20V 3.5A 3-DFN

4952
ZXTN23015CFHTA

ZXTN23015CFHTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 15V 6A SOT23-3

8209000
DCP68-25-13

DCP68-25-13

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 20V 1A SOT-223

50000
FZT605TA

FZT605TA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN DARL 120V 1.5A SOT223

72640
FMMT415TD

FMMT415TD

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 100V 0.5A SOT23-3

1215
BC846AW-7-F

BC846AW-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 65V 0.1A SC70-3

176033000
ZTX957STZ

ZTX957STZ

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 300V 1A E-LINE

8000
MMBT5551-7-F

MMBT5551-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 160V 0.6A SOT23-3

90610
FZT1151ATA

FZT1151ATA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 40V 3A SOT-223

31105
MMBT4401-13-F

MMBT4401-13-F

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 40V 600MA SOT23

20000
DCP51-16-13

DCP51-16-13

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 45V 1A SOT-223

60
FCX790ATA

FCX790ATA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 40V 2A SOT89

24907
DSS20200L-7

DSS20200L-7

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 20V 2A SOT-23

12937
BC817-25W-7

BC817-25W-7

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 45V 0.5A SC70-3

26390
ZXTN19100CGTA

ZXTN19100CGTA

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 100V 5.5A SOT223

159772000
DNLS320E-13

DNLS320E-13

Zetex Semiconductors (Diodes Inc.)

TRANS NPN 20V 3A SOT-223

2004
ZTX955STZ

ZTX955STZ

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 140V 3A E-LINE

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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