Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
KSD471AYBU

KSD471AYBU

1A, 30V, NPN, TO-92

85919

BUV48

BUV48

TRANS GP BJT NPN 400V 15A

11280

MMBT3906-7-F

MMBT3906-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 40V 0.2A SOT23-3

149448

KSD1616AYTA

KSD1616AYTA

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 60V 1A TO92-3

0

2SA2223

2SA2223

Sanken Electric Co., Ltd.

TRANS PNP 230V 15A TO3P

0

BC807-25,235

BC807-25,235

Nexperia

TRANS PNP 45V 500MA TO236AB

44414

SST3906HZGT116

SST3906HZGT116

ROHM Semiconductor

PNP GENERAL PURPOSE TRANSISTOR

1985

KSA1175YBU

KSA1175YBU

TRANS PNP 50V 150MA TO92S

9954

DXT2013P5-13

DXT2013P5-13

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 100V 5A POWERDI5

34

BC33716

BC33716

TRANS NPN 45V 800MA TO92-3

66487

PDTD143EU135

PDTD143EU135

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

20000

STR1550

STR1550

STMicroelectronics

TRANS NPN 500V 0.5A SOT-23

8697

2SD2700TL

2SD2700TL

ROHM Semiconductor

TRANS NPN 12V 2A TUMT3

2891

BUL743

BUL743

STMicroelectronics

TRANS NPN 500V 12A TO-220

0

ZXTP25020DZTA

ZXTP25020DZTA

Zetex Semiconductors (Diodes Inc.)

TRANS PNP 20V 5A SOT89

1765

2N3110

2N3110

Solid State Inc.

TRANS NPN 40V 1A TO39

1000

2SA1418S-TD-E

2SA1418S-TD-E

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 160V 700MA PCP

15508000

2N5038G

2N5038G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 90V 20A TO204

4481500

BC327-16-AP

BC327-16-AP

Micro Commercial Components (MCC)

TRANS PNP 45V 0.8A TO-92

0

BCP53-10,135

BCP53-10,135

Nexperia

TRANS PNP 80V 1A SOT223

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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