Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
2N6487G

2N6487G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 60V 15A TO-220AB

392

KSC5047TU

KSC5047TU

TRANS NPN 50V 15A TO3PN

1436

2SA1566JIETR-E

2SA1566JIETR-E

Renesas Electronics America

SMALL SIGNAL BIPOLAR TRANSISTOR,

0

2SC4489T-AN

2SC4489T-AN

TRANS NPN 100V 2A 3NMP

321550

BD243B

BD243B

POWER BIPOLAR TRANSISTOR, NPN

2718

BD136

BD136

STMicroelectronics

TRANS PNP 45V 1.5A SOT-32

4752

2N4400TF

2N4400TF

TRANS NPN 40V 600MA TO92-3

48000

NJL21194DG

NJL21194DG

TRANS NPN 250V 16A TO264

4720

BC848CE6327HTSA1

BC848CE6327HTSA1

IR (Infineon Technologies)

TRANS NPN 30V 100MA SOT23-3

69950

NSVMMBT5401M3T5G

NSVMMBT5401M3T5G

Sanyo Semiconductor/ON Semiconductor

PNP TRANSISTOR 150V

2147483647

MJD44H11T4

MJD44H11T4

STMicroelectronics

TRANS NPN 80V 8A DPAK

3304

BC548B A1G

BC548B A1G

TSC (Taiwan Semiconductor)

TRANSISTOR, NPN, 30V, 0.1A, 200A

0

BC848BE6327

BC848BE6327

IR (Infineon Technologies)

BIPOLAR GEN PURPOSE TRANSISTOR

100505

EMF18XV6T5

EMF18XV6T5

SMALL SIGNAL BIPOLAR TRANSISTOR

88000

MJF6388G

MJF6388G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 100V 10A TO220FP

0

MJF6388

MJF6388

TRANS NPN 100V 10A TO220FP

0

2SD1803S-H

2SD1803S-H

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 50V 5A TP

149116000

BC857BU3HZGT106

BC857BU3HZGT106

ROHM Semiconductor

PNP GENERAL PURPOSE TRANSISTOR (

4650

KSC900LTA

KSC900LTA

TRANS NPN 25V 50MA TO92-3

0

FJPF5321TU

FJPF5321TU

TRANS NPN 500V 5A TO220F

1492

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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