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Transistors - Bipolar (BJT) - RF

Image Part Number Description / PDF Quantity Rfq
KST10MTF

KST10MTF

Sanyo Semiconductor/ON Semiconductor

RF TRANS NPN 25V 650MHZ SOT23-3

18890
BFP720H6327

BFP720H6327

IR (Infineon Technologies)

RF TRANSISTOR, X BAND, NPN

30000
MAX2601ESA

MAX2601ESA

Analog Devices, Inc.

RF POWER TRANSISTOR FOR 900 MHZ

603
HFA3135IH96

HFA3135IH96

Intersil (Renesas Electronics America)

RF SMALL SIGNAL TRANSISTOR

7024
BFP620FH7764XTSA1

BFP620FH7764XTSA1

IR (Infineon Technologies)

RF TRANS NPN 2.8V 65GHZ 4TSFP

2233
DSC9F0100L

DSC9F0100L

Panasonic

RF TRANS NPN 10V 1.9GHZ SSMINI3

2748
2N5583

2N5583

Solid State Inc.

PNP SIL RF TO39

100
BFR93AE6327HTSA1

BFR93AE6327HTSA1

IR (Infineon Technologies)

RF TRANS NPN 12V 6GHZ SOT23-3

8288
MT3S111P(TE12L,F)

MT3S111P(TE12L,F)

Toshiba Electronic Devices and Storage Corporation

RF TRANS NPN 6V 8GHZ PW-MINI

7857
KSC1674OBU

KSC1674OBU

RF SMALL SIGNAL TRANSISTOR

146093
SS9018GBU

SS9018GBU

RF 0.05A, VERY HIGH FREQUENCY BA

58895
BFR182WH6327XTSA1

BFR182WH6327XTSA1

IR (Infineon Technologies)

RF TRANS NPN 12V 8GHZ SOT323-3

12368
BFP196WNH6327XTSA1

BFP196WNH6327XTSA1

IR (Infineon Technologies)

RF TRANS NPN 12V 7.5GHZ SOT343-4

5128
PBR941,215

PBR941,215

NXP Semiconductors

UHF WIDEBAND TRANSISTOR

60000
HFA3096BZ96

HFA3096BZ96

Intersil (Renesas Electronics America)

RF TRANS 12/15V 5.5GHZ 16SOIC

0
MRF429

MRF429

Metelics (MACOM Technology Solutions)

TRANS RF NPN 50V 16A 211-11

0
BFR340FH6327

BFR340FH6327

IR (Infineon Technologies)

LOW-NOISE TRANSISTOR

197900
BFR380L3E6327XTMA1

BFR380L3E6327XTMA1

IR (Infineon Technologies)

RF TRANS NPN 9V 14GHZ TSLP-3-1

0
BFS17WH6327XTSA1

BFS17WH6327XTSA1

IR (Infineon Technologies)

RF TRANS NPN 15V 1.4GHZ SOT323-3

0
2SC5108-Y,LF

2SC5108-Y,LF

Toshiba Electronic Devices and Storage Corporation

RF TRANS NPN 10V 6GHZ SSM

0

Transistors - Bipolar (BJT) - RF

1. Overview

Radio Frequency Bipolar Junction Transistors (RF BJTs) are three-layer semiconductor devices optimized for amplification and switching in high-frequency applications (typically >100 MHz). These transistors maintain stable performance in microwave and ultra-high frequency (UHF) ranges, characterized by high current gain-bandwidth product (fT), low noise figures, and fast switching capabilities. Their importance in modern technology spans wireless communication infrastructure, radar systems, and RF test equipment, enabling efficient signal transmission and reception in 5G networks, satellite communications, and IoT devices.

2. Main Types & Functional Classification

TypeFunctional FeaturesApplication Examples
NPN RF BJTHigh electron mobility, optimized for low-noise amplification5G base station LNAs, GPS receivers
PNP RF BJTComplementary design for power amplificationRF power modules, automotive radar
RF Darlington PairHigh (current gain), cascaded amplificationAntenna drivers, industrial RF heaters
Heterojunction Bipolar Transistor (HBT)Compound semiconductor materials (SiGe/GaAs), ultra-high fTOptical communication transceivers, mmWave systems

3. Structure & Composition

Typical RF BJT structure includes:

  • Material: Silicon (Si), Silicon-Germanium (SiGe), Gallium Arsenide (GaAs)
  • Layer Architecture: Emitter (high doping), Base (thin layer), Collector (graded doping)
  • Package Types: Surface-mount (SOT-89, SOT-343), Through-hole (TO-18, TO-92)
  • Metallization: Gold/aluminum contacts for reduced parasitic resistance

Advanced designs incorporate air-bridge structures to minimize parasitic capacitance and epitaxial layers for improved frequency response.

4. Key Technical Parameters

ParameterDescriptionTypical Range
fT (Transition Frequency)Current gain cutoff frequency1 GHz - 100 GHz
GUM (Max. Available Gain)Power gain at optimal impedance10 dB - 30 dB
Pout (Output Power)RMS power capability0.1 W - 500 W
NF (Noise Figure)Signal-to-noise degradation0.3 dB - 5 dB
VCE0 (Breakdown Voltage)Collector-emitter withstand voltage5 V - 80 V
(Junction Temperature)Thermal stability limit150 C - 200 C

5. Application Fields

  • Telecommunications: 5G massive MIMO amplifiers, fiber optic transceivers
  • Defense: Phased array radar systems, electronic warfare jammers
  • Test & Measurement: RF signal generators, spectrum analyzers
  • Consumer Electronics: Bluetooth LE modules, Wi-Fi 6E front-ends
  • Industrial: Plasma generators, RFID readers

6. Leading Manufacturers & Products

ManufacturerRepresentative ProductKey Specifications
Infineon TechnologiesBFP740FfT=50 GHz, NF=0.8 dB, Pout=18 dBm
STMicroelectronicsSTAG21412.7 GHz dual-stage amplifier, 32 dB gain
Skyworks SolutionsASK240110.05-6 GHz, 50 W GaAs power transistor
ON SemiconductorMRF151G125 W, 880 MHz, 40% efficiency

7. Selection Guidelines

Key considerations:

  1. Match fT to application frequency with 20% margin
  2. Verify load-line requirements for power applications
  3. Select appropriate package for thermal dissipation (e.g., TO-220 for >50 W)
  4. Derate VCE0 by 30% in high-temperature environments
  5. Consider integrated solutions (RFICs) for complex impedance matching

8. Industry Trends

Future development directions:

  • Transition to SiGe BiCMOS technology for 100+ GHz applications
  • Integration with GaN-on-SiC substrates for hybrid power amplifiers
  • Development of 5G NR direct-conversion transmitters using HBT arrays
  • Advancements in wafer-level packaging (WLP) for mmWave 5G devices
  • Adoption of AI-driven parameter optimization in production testing
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