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Transistors - Bipolar (BJT) - RF

Image Part Number Description / PDF Quantity Rfq
BFP196WH6327XTSA1

BFP196WH6327XTSA1

IR (Infineon Technologies)

RF TRANS NPN 12V 7.5GHZ SOT343-4

17469
NSVF6003SB6T1G

NSVF6003SB6T1G

Sanyo Semiconductor/ON Semiconductor

RF TRANS NPN 12V 7GHZ 6CPH

63000
BFR949L3E6327

BFR949L3E6327

IR (Infineon Technologies)

RF BIPOLAR TRANSISTOR

13974
MCH4009-TL-H

MCH4009-TL-H

Sanyo Semiconductor/ON Semiconductor

RF TRANS NPN 3.5V 25GHZ 4MCPH

1011121000
2N2857 PBFREE

2N2857 PBFREE

Central Semiconductor

RF TRANS NPN 15V 1.9GHZ TO72

3825
CA3127MZ

CA3127MZ

Renesas Electronics America

TRANSISTOR ARRAY

3483
BFU520YF

BFU520YF

NXP Semiconductors

RF TRANS 2 NPN 12V 10GHZ SOT363

0
BFG505/X,215

BFG505/X,215

NXP Semiconductors

TRANS RF NPN 9GHZ 15V SOT143B

4611
MMBTH10LT1G

MMBTH10LT1G

RF SMALL SIGNAL BIPOLAR TRANSIST

2375455
NTE329

NTE329

NTE Electronics, Inc.

RF TRANS NPN 30V TO39

1576
BFP843FH6327XTSA1

BFP843FH6327XTSA1

IR (Infineon Technologies)

BFP843 - ULTRA LOW-NOISE SIGE:C

983565
BFR93AWE6327

BFR93AWE6327

IR (Infineon Technologies)

RF BIPOLAR TRANSISTOR

4900
15GN03MA-TL-E

15GN03MA-TL-E

Sanyo Semiconductor/ON Semiconductor

RF TRANS NPN 10V 1.5GHZ 3MCP

3859
BFU520XRVL

BFU520XRVL

NXP Semiconductors

RF SMALL SIGNAL BIPOLAR TRANSIST

3868
BFP183-E7764

BFP183-E7764

IR (Infineon Technologies)

RF BIPOLAR TRANSISTOR

117000
NESG3031M14-T3-A

NESG3031M14-T3-A

Renesas Electronics America

RF SMALL SIGNAL TRANSISTOR

43931
MPSH81

MPSH81

Sanyo Semiconductor/ON Semiconductor

DIE TRANSISTOR RF PNP

0
BFP460E6327HTSA1

BFP460E6327HTSA1

IR (Infineon Technologies)

RF TRANS NPN 5.8V 22GHZ SOT343-4

102
BFR193L3E6327XTMA1

BFR193L3E6327XTMA1

IR (Infineon Technologies)

RF TRANS NPN 12V 8GHZ TSLP-3-1

2696
BFU520XVL

BFU520XVL

NXP Semiconductors

RF TRANS NPN 12V 10.5GHZ SOT143B

0

Transistors - Bipolar (BJT) - RF

1. Overview

Radio Frequency Bipolar Junction Transistors (RF BJTs) are three-layer semiconductor devices optimized for amplification and switching in high-frequency applications (typically >100 MHz). These transistors maintain stable performance in microwave and ultra-high frequency (UHF) ranges, characterized by high current gain-bandwidth product (fT), low noise figures, and fast switching capabilities. Their importance in modern technology spans wireless communication infrastructure, radar systems, and RF test equipment, enabling efficient signal transmission and reception in 5G networks, satellite communications, and IoT devices.

2. Main Types & Functional Classification

TypeFunctional FeaturesApplication Examples
NPN RF BJTHigh electron mobility, optimized for low-noise amplification5G base station LNAs, GPS receivers
PNP RF BJTComplementary design for power amplificationRF power modules, automotive radar
RF Darlington PairHigh (current gain), cascaded amplificationAntenna drivers, industrial RF heaters
Heterojunction Bipolar Transistor (HBT)Compound semiconductor materials (SiGe/GaAs), ultra-high fTOptical communication transceivers, mmWave systems

3. Structure & Composition

Typical RF BJT structure includes:

  • Material: Silicon (Si), Silicon-Germanium (SiGe), Gallium Arsenide (GaAs)
  • Layer Architecture: Emitter (high doping), Base (thin layer), Collector (graded doping)
  • Package Types: Surface-mount (SOT-89, SOT-343), Through-hole (TO-18, TO-92)
  • Metallization: Gold/aluminum contacts for reduced parasitic resistance

Advanced designs incorporate air-bridge structures to minimize parasitic capacitance and epitaxial layers for improved frequency response.

4. Key Technical Parameters

ParameterDescriptionTypical Range
fT (Transition Frequency)Current gain cutoff frequency1 GHz - 100 GHz
GUM (Max. Available Gain)Power gain at optimal impedance10 dB - 30 dB
Pout (Output Power)RMS power capability0.1 W - 500 W
NF (Noise Figure)Signal-to-noise degradation0.3 dB - 5 dB
VCE0 (Breakdown Voltage)Collector-emitter withstand voltage5 V - 80 V
(Junction Temperature)Thermal stability limit150 C - 200 C

5. Application Fields

  • Telecommunications: 5G massive MIMO amplifiers, fiber optic transceivers
  • Defense: Phased array radar systems, electronic warfare jammers
  • Test & Measurement: RF signal generators, spectrum analyzers
  • Consumer Electronics: Bluetooth LE modules, Wi-Fi 6E front-ends
  • Industrial: Plasma generators, RFID readers

6. Leading Manufacturers & Products

ManufacturerRepresentative ProductKey Specifications
Infineon TechnologiesBFP740FfT=50 GHz, NF=0.8 dB, Pout=18 dBm
STMicroelectronicsSTAG21412.7 GHz dual-stage amplifier, 32 dB gain
Skyworks SolutionsASK240110.05-6 GHz, 50 W GaAs power transistor
ON SemiconductorMRF151G125 W, 880 MHz, 40% efficiency

7. Selection Guidelines

Key considerations:

  1. Match fT to application frequency with 20% margin
  2. Verify load-line requirements for power applications
  3. Select appropriate package for thermal dissipation (e.g., TO-220 for >50 W)
  4. Derate VCE0 by 30% in high-temperature environments
  5. Consider integrated solutions (RFICs) for complex impedance matching

8. Industry Trends

Future development directions:

  • Transition to SiGe BiCMOS technology for 100+ GHz applications
  • Integration with GaN-on-SiC substrates for hybrid power amplifiers
  • Development of 5G NR direct-conversion transmitters using HBT arrays
  • Advancements in wafer-level packaging (WLP) for mmWave 5G devices
  • Adoption of AI-driven parameter optimization in production testing
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