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Transistors - Bipolar (BJT) - RF

Image Part Number Description / PDF Quantity Rfq
MSD2714AT1G

MSD2714AT1G

Sanyo Semiconductor/ON Semiconductor

RF TRANS NPN 25V 650MHZ SC59

0
NE677M04-T2-A

NE677M04-T2-A

CEL (California Eastern Laboratories)

RF TRANS NPN 6V 15GHZ SOT343F

0
2SC5374A-TL-E

2SC5374A-TL-E

Sanyo Semiconductor/ON Semiconductor

RF TRANS NPN 10V 5.2GHZ SMCP

0
BFP520E6327BTSA1

BFP520E6327BTSA1

IR (Infineon Technologies)

RF TRANS NPN 3.5V 45GHZ SOT343-4

0
BFP405E6740HTSA1

BFP405E6740HTSA1

IR (Infineon Technologies)

RF TRANS NPN 5V 25GHZ SOT343-4

0
BFG135AE6327XT

BFG135AE6327XT

IR (Infineon Technologies)

RF TRANS NPN 15V 6GHZ SOT223-4

0
BFG480W,135

BFG480W,135

NXP Semiconductors

RF TRANS NPN 4.5V 21GHZ CMPAK-4

0
BFQ149,115

BFQ149,115

NXP Semiconductors

RF TRANS PNP 15V 5GHZ SOT89-3

0
NE663M04-T2-A

NE663M04-T2-A

CEL (California Eastern Laboratories)

RF TRANS NPN 3.3V 15GHZ SOT343F

0
MRF5812GR1

MRF5812GR1

Microsemi

RF TRANS NPN 15V 5GHZ 8SO

0
MPSH10RLRPG

MPSH10RLRPG

Sanyo Semiconductor/ON Semiconductor

RF TRANS NPN 25V 650MHZ TO92-3

0
BFR 181T E6327

BFR 181T E6327

IR (Infineon Technologies)

RF TRANS NPN 12V 8GHZ SC75

0
NE85630-T1-A

NE85630-T1-A

CEL (California Eastern Laboratories)

RF TRANS NPN 12V 4.5GHZ SOT323

0
AT-32033-TR2G

AT-32033-TR2G

Broadcom

RF TRANS NPN 5.5V SOT23

0
START499ETR

START499ETR

STMicroelectronics

RF TRANS NPN 4.5V 1.9GHZ SOT343

0
2SC5011-T1-A

2SC5011-T1-A

CEL (California Eastern Laboratories)

RF TRANS NPN 12V 6.5GHZ SOT343

0
ZUMTS17HTA

ZUMTS17HTA

Zetex Semiconductors (Diodes Inc.)

RF TRANS NPN 15V 1.3GHZ SOT323

0
SD1405

SD1405

STMicroelectronics

RF TRANS NPN 18V M174

0
MRF8372R2

MRF8372R2

Microsemi

RF TRANS NPN 16V 870MHZ 8SO

0
FMMT5179TA

FMMT5179TA

Zetex Semiconductors (Diodes Inc.)

RF TRANS NPN 12V 2GHZ SOT23-3

0

Transistors - Bipolar (BJT) - RF

1. Overview

Radio Frequency Bipolar Junction Transistors (RF BJTs) are three-layer semiconductor devices optimized for amplification and switching in high-frequency applications (typically >100 MHz). These transistors maintain stable performance in microwave and ultra-high frequency (UHF) ranges, characterized by high current gain-bandwidth product (fT), low noise figures, and fast switching capabilities. Their importance in modern technology spans wireless communication infrastructure, radar systems, and RF test equipment, enabling efficient signal transmission and reception in 5G networks, satellite communications, and IoT devices.

2. Main Types & Functional Classification

TypeFunctional FeaturesApplication Examples
NPN RF BJTHigh electron mobility, optimized for low-noise amplification5G base station LNAs, GPS receivers
PNP RF BJTComplementary design for power amplificationRF power modules, automotive radar
RF Darlington PairHigh (current gain), cascaded amplificationAntenna drivers, industrial RF heaters
Heterojunction Bipolar Transistor (HBT)Compound semiconductor materials (SiGe/GaAs), ultra-high fTOptical communication transceivers, mmWave systems

3. Structure & Composition

Typical RF BJT structure includes:

  • Material: Silicon (Si), Silicon-Germanium (SiGe), Gallium Arsenide (GaAs)
  • Layer Architecture: Emitter (high doping), Base (thin layer), Collector (graded doping)
  • Package Types: Surface-mount (SOT-89, SOT-343), Through-hole (TO-18, TO-92)
  • Metallization: Gold/aluminum contacts for reduced parasitic resistance

Advanced designs incorporate air-bridge structures to minimize parasitic capacitance and epitaxial layers for improved frequency response.

4. Key Technical Parameters

ParameterDescriptionTypical Range
fT (Transition Frequency)Current gain cutoff frequency1 GHz - 100 GHz
GUM (Max. Available Gain)Power gain at optimal impedance10 dB - 30 dB
Pout (Output Power)RMS power capability0.1 W - 500 W
NF (Noise Figure)Signal-to-noise degradation0.3 dB - 5 dB
VCE0 (Breakdown Voltage)Collector-emitter withstand voltage5 V - 80 V
(Junction Temperature)Thermal stability limit150 C - 200 C

5. Application Fields

  • Telecommunications: 5G massive MIMO amplifiers, fiber optic transceivers
  • Defense: Phased array radar systems, electronic warfare jammers
  • Test & Measurement: RF signal generators, spectrum analyzers
  • Consumer Electronics: Bluetooth LE modules, Wi-Fi 6E front-ends
  • Industrial: Plasma generators, RFID readers

6. Leading Manufacturers & Products

ManufacturerRepresentative ProductKey Specifications
Infineon TechnologiesBFP740FfT=50 GHz, NF=0.8 dB, Pout=18 dBm
STMicroelectronicsSTAG21412.7 GHz dual-stage amplifier, 32 dB gain
Skyworks SolutionsASK240110.05-6 GHz, 50 W GaAs power transistor
ON SemiconductorMRF151G125 W, 880 MHz, 40% efficiency

7. Selection Guidelines

Key considerations:

  1. Match fT to application frequency with 20% margin
  2. Verify load-line requirements for power applications
  3. Select appropriate package for thermal dissipation (e.g., TO-220 for >50 W)
  4. Derate VCE0 by 30% in high-temperature environments
  5. Consider integrated solutions (RFICs) for complex impedance matching

8. Industry Trends

Future development directions:

  • Transition to SiGe BiCMOS technology for 100+ GHz applications
  • Integration with GaN-on-SiC substrates for hybrid power amplifiers
  • Development of 5G NR direct-conversion transmitters using HBT arrays
  • Advancements in wafer-level packaging (WLP) for mmWave 5G devices
  • Adoption of AI-driven parameter optimization in production testing
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