Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
DMG563010R

DMG563010R

Panasonic

TRANS PREBIAS NPN/PNP SMINI5

9000

FMA9AT148

FMA9AT148

ROHM Semiconductor

TRANS PREBIAS DUAL PNP SMT5

576

DMG963020R

DMG963020R

Panasonic

TRANS PREBIAS NPN/PNP SSMINI5

8000

DEMD48-7

DEMD48-7

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS NPN/PNP SOT563

1260

RN1901FETE85LF

RN1901FETE85LF

Toshiba Electronic Devices and Storage Corporation

TRANS 2NPN PREBIAS 0.1W ES6

2780

PEMD9,115

PEMD9,115

Nexperia

TRANS PREBIAS NPN/PNP SOT666

254

NSBA124XDXV6T1

NSBA124XDXV6T1

SMALL SIGNAL BIPOLAR TRANSISTOR

76000

DMG964H30R

DMG964H30R

Panasonic

TRANS PREBIAS NPN/PNP SSMINI6

8000

EMH6T2R

EMH6T2R

ROHM Semiconductor

TRANS 2NPN PREBIAS 0.15W EMT6

15023

DTA015EUBTL

DTA015EUBTL

ROHM Semiconductor

TRANS PREBIAS PNP 50V 0.2W UMT3F

2975

PUMD17,115

PUMD17,115

Nexperia

TRANS PREBIAS NPN/PNP 50V 6TSSOP

855

NSBA124EDXV6T1

NSBA124EDXV6T1

SMALL SIGNAL BIPOLAR TRANSISTOR

100000

SMUN5116DW1T1G

SMUN5116DW1T1G

Sanyo Semiconductor/ON Semiconductor

TRANS 2PNP PREBIAS 0.187W SOT363

0

NSBC143ZDXV6T1

NSBC143ZDXV6T1

SMALL SIGNAL BIPOLAR TRANSISTOR

55960

PBLS2022D,115

PBLS2022D,115

Nexperia

TRANS PREBIAS 1PNP 1PNP 6TSOP

20

BCR183SH6433XTMA1

BCR183SH6433XTMA1

IR (Infineon Technologies)

TRANS 2PNP PREBIAS 0.25W SOT363

0

PUMB20,115

PUMB20,115

NXP Semiconductors

NOW NEXPERIA PUMB20 - SMALL SIGN

50800

PUMD19,115

PUMD19,115

Nexperia

PUMD19 - NPN/PNP RESISTOR-EQUIPP

89950

DDC122LH-7

DDC122LH-7

Zetex Semiconductors (Diodes Inc.)

TRANS 2NPN PREBIAS 0.15W SOT563

0

DMA9640M0R

DMA9640M0R

Panasonic

TRANS PREBIAS DUAL PNP SSMINI6

4298

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

1. Overview

Pre-biased Bipolar Junction Transistor (BJT) arrays integrate multiple transistors with built-in bias resistors in a single package. These devices simplify circuit design by eliminating external resistor networks, reducing PCB footprint, and ensuring stable operation. They play a critical role in modern electronics for signal amplification, switching, and logic functions in applications ranging from consumer electronics to industrial automation.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN ArraysCommon-emitter configuration with integrated base resistors for switchingDigital logic circuits, relay drivers
PNP ArraysNegative voltage switching with matched resistor ratiosMotor control, battery management
Complementary PairsMatched NPN/PNP transistors for push-pull amplifiersAudio amplifiers, power supplies
Darlington ArraysHigh current gain ( ) through cascaded transistor pairsHigh-current switching in automotive systems

3. Structure and Composition

Pre-biased BJT arrays typically use silicon epitaxial planar technology. The structure includes:

  • Dielectric Isolation: Silicon dioxide layers separate individual transistors
  • Integrated Resistors: Laser-trimmed thin-film resistors set bias points
  • Package: Standard SOT-26, SOT-89, or SOP-8 plastic packages
  • Protection Diodes: Built-in ESD protection networks

4. Key Technical Specifications

ParameterDescriptionImportance
hFE (Current Gain)Ratio of collector to base currentDetermines amplification capability
VCEO (Max Voltage)Max voltage between collector and emitterLimits operating voltage range
Ic (Max Current)Maximum collector current ratingDefines power handling capability
fT (Transition Frequency)Frequency at which gain drops to unityIndicates high-frequency performance
VCE(sat)Collector-emitter saturation voltageAffects power efficiency

5. Application Areas

Main industries and typical equipment:

  • Consumer Electronics: Mobile phones, LED displays, home appliances
  • Industrial Control: PLCs, motor drivers, sensor interfaces
  • Automotive: ECU systems, LED lighting drivers, infotainment systems
  • Telecom: Base station power amplifiers, optical transceivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMBT3946DW1T5G100mA Ic, 40V VCEO, 100MHz fT
NexperiaPMBT2369EARDual NPN array, 300mA total current
STMicroelectronicsSMUN2232TPNP+Schottky diode array, 100mA
InfineonIPAR10L3M06Automotive-grade Darlington array

7. Selection Recommendations

Key considerations during component selection:

  • Match VCEO/Ic ratings with circuit requirements
  • Select appropriate hFE for desired gain
  • Consider thermal resistance for power applications
  • Evaluate package size vs. current density
  • Verify temperature stability (-40 C to +150 C)

8. Industry Trends

Future development directions include:

  • Higher integration levels (e.g., 8-transistor arrays in TSSOP)
  • Wide bandgap materials (SiC/GaN BJT hybrids)
  • Micron-scale packaging (0.4mm pitch QFN)
  • Smart power arrays with integrated protection circuits
  • Reduced parasitic capacitance for >5GHz RF applications
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