Diodes - Zener - Single

Image Part Number Description / PDF Quantity Rfq
DZ2J027M0L

DZ2J027M0L

Panasonic

DIODE ZENER 2.7V 200MW SMINI2

0

MAZ31200ML

MAZ31200ML

Panasonic

DIODE ZENER 12V 200MW MINI3

0

DZ2J033M0L

DZ2J033M0L

Panasonic

DIODE ZENER 3.3V 200MW SMINI2

0

MAZS1600ML

MAZS1600ML

Panasonic

DIODE ZENER 16V 150MW SSMINI2

0

MAZS039G0L

MAZS039G0L

Panasonic

DIODE ZENER 3.8V 150MW SSMINI2

0

MAZ81100ML

MAZ81100ML

Panasonic

DIODE ZENER 11V 150MW SMINI2

0

MAZS200GML

MAZS200GML

Panasonic

DIODE ZENER 20V 150MW SSMINI2

0

MAZD068G0L

MAZD068G0L

Panasonic

DIODE ZENER 6.8V 120MW SSSMINI2

0

MAZS091GML

MAZS091GML

Panasonic

DIODE ZENER 9.1V 150MW SSMINI2

0

MAZ40360MF

MAZ40360MF

Panasonic

DIODE ZENER 3.6V 370MW DO34

0

DZ2W30000L

DZ2W30000L

Panasonic

DIODE ZENER 30V 1W MINI2

0

MAZS0390HL

MAZS0390HL

Panasonic

DIODE ZENER 4V 150MW SSMINI2

0

MAZS0910ML

MAZS0910ML

Panasonic

DIODE ZENER 9.1V 150MW SSMINI2

0

DZ2705600L

DZ2705600L

Panasonic

DIODE ZENER 5.6V 120MW SSSMINI2

0

MAZ8270GML

MAZ8270GML

Panasonic

DIODE ZENER 27V 150MW SMINI2

0

MAZS0620ML

MAZS0620ML

Panasonic

DIODE ZENER 6.2V 150MW SSMINI2

0

DZ2439000L

DZ2439000L

Panasonic

DIODE ZENER 39V 2W TMINIP2

0

MAZS082GML

MAZS082GML

Panasonic

DIODE ZENER 8.2V 150MW SSMINI2

0

MAZS2400ML

MAZS2400ML

Panasonic

DIODE ZENER 24V 150MW SSMINI2

0

DZ2J100M0L

DZ2J100M0L

Panasonic

DIODE ZENER 10V 200MW SMINI2

0

Diodes - Zener - Single

1. Overview

Single Zener diodes are discrete semiconductor devices designed to operate in the reverse breakdown region, maintaining a stable voltage across a wide range of currents. Based on the Zener effect and avalanche breakdown mechanisms, these components are critical for voltage regulation, reference, and protection circuits. They serve as foundational elements in power supplies, analog circuits, and precision measurement systems, ensuring reliability in electronics ranging from consumer devices to industrial equipment.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Low-Voltage Zener (2.4V-10V)Utilizes Zener effect with sharp breakdown characteristicsVoltage references, comparator circuits
Mid-Voltage Zener (10V-100V)Combines Zener and avalanche breakdownPower supply regulation, clamping circuits
High-Voltage Zener (>100V)Primarily avalanche breakdown mechanismHigh-voltage protection, industrial controls
Surface-Mount (SMD) ZenerMiniaturized packaging for automated assemblyMobile devices, wearable electronics

3. Structure and Composition

Single Zener diodes consist of a heavily doped PN junction semiconductor structure, typically fabricated from silicon. The cathode terminal is marked with a band, while the anode connects to the P-type material. Advanced devices employ passivation layers (e.g., silicon dioxide) to improve stability and reliability. Common packaging includes axial leaded (DO-35, DO-41) and surface-mount (SOD-123, SOT-23) formats with glass or plastic encapsulation for environmental protection.

4. Key Technical Specifications

ParameterDescriptionImportance
Zener Voltage (Vz)Specified reverse breakdown voltage at test currentDetermines operating voltage level
Power Dissipation (Pz)Maximum power handling capabilityDefines thermal management requirements
Dynamic Impedance (Zz)AC resistance affecting voltage stabilityImpacts regulation performance
Temperature Coefficient (TC)Voltage drift per degree CelsiusCritical for precision applications
Reverse Leakage Current (Ir)Off-state current at rated voltageAffects power efficiency

5. Application Fields

Key industries include:

  • Power electronics (switching power supplies, DC-DC converters)
  • Industrial automation (PLC voltage references, sensor interfaces)
  • Consumer electronics (mobile chargers, LED drivers)
  • Automotive systems (battery management, onboard charging)
  • Test equipment (precision multimeters, calibration devices)

Example: The TL431 programmable Zener diode is widely used in SMPS feedback loops to achieve 1% voltage accuracy.

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
TI (Texas Instruments)LM4040-N1.2V-10V, 0.1% initial tolerance, SOT-23
ON Semiconductor1N47xx Series3.3V-400V, 1W-50W power range
STMicroelectronicsBZX84-C5V15.1V, 300mW, 2% tolerance, SOD-323
NexperiaPXZGxx Series2.5V-75V, AEC-Q101 automotive qualification

7. Selection Guidelines

Key considerations:

  1. Determine required Vz with 5% margin over operating current range
  2. Calculate Pz = Vz maximum expected current
  3. Select package type based on board space and thermal requirements
  4. For precision applications, prioritize TC < 100ppm/ C and low Zz
  5. Consider automotive-grade parts for harsh environments

8. Industry Trends

Current development trends include: - Miniaturization with advanced trench Zener structures - Integration with ESD protection in combo devices - Wide bandgap materials (SiC) for high-voltage applications - Improved temperature stability through laser trimming - Increased adoption in renewable energy systems for voltage monitoring - Growth in automotive electronics driving AEC-Q qualified parts

RFQ BOM Call Skype Email
Top