Diodes - Zener - Single

Image Part Number Description / PDF Quantity Rfq
JTX1N4959US

JTX1N4959US

Semtech

DIODE ZENER 11V 500W

0

JTXV1N4980

JTXV1N4980

Semtech

DIODE ZENER 82V 500W

0

JTX1N4959

JTX1N4959

Semtech

DIODE ZENER 11V 500W

0

JTXV1N4966

JTXV1N4966

Semtech

DIODE ZENER 22V 500W

0

JTXV1N4480

JTXV1N4480

Semtech

DIODE ZENER 43V 1.5W

0

JTXV1N4488

JTXV1N4488

Semtech

DIODE ZENER 91V 1.5W

0

JAN1N6476US

JAN1N6476US

Semtech

DIODE ZENER T DAP 1500W SM

0

1N4948

1N4948

Semtech

DIODE ZENER AXIAL

0

JTXV1N4463

JTXV1N4463

Semtech

DIODE ZENER 8.2V 1.5W

0

JTX1N4488

JTX1N4488

Semtech

DIODE ZENER 91V 1.5W

0

JTXV1N4474

JTXV1N4474

Semtech

DIODE ZENER 24V 1.5W

0

JTX1N4485

JTX1N4485

Semtech

DIODE ZENER 68V 1.5W

0

JTX1N4978

JTX1N4978

Semtech

DIODE ZENER 68V 500W

0

JTX1N4973

JTX1N4973

Semtech

DIODE ZENER 43V 500W

0

JTXV1N4491

JTXV1N4491

Semtech

DIODE ZENER 120V 1.5W

0

JTX1N4987US

JTX1N4987US

Semtech

DIODE ZENER 160V 500W

0

JTXV1N4471US

JTXV1N4471US

Semtech

DIODE ZENER 18V 1.5W

0

JTXV1N4464

JTXV1N4464

Semtech

DIODE ZENER 9.1V 1.5W

0

JTX1N4966US

JTX1N4966US

Semtech

DIODE ZENER 22V 500W

0

JTXV1N4962

JTXV1N4962

Semtech

DIODE ZENER 15V 500W

0

Diodes - Zener - Single

1. Overview

Single Zener diodes are discrete semiconductor devices designed to operate in the reverse breakdown region, maintaining a stable voltage across a wide range of currents. Based on the Zener effect and avalanche breakdown mechanisms, these components are critical for voltage regulation, reference, and protection circuits. They serve as foundational elements in power supplies, analog circuits, and precision measurement systems, ensuring reliability in electronics ranging from consumer devices to industrial equipment.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Low-Voltage Zener (2.4V-10V)Utilizes Zener effect with sharp breakdown characteristicsVoltage references, comparator circuits
Mid-Voltage Zener (10V-100V)Combines Zener and avalanche breakdownPower supply regulation, clamping circuits
High-Voltage Zener (>100V)Primarily avalanche breakdown mechanismHigh-voltage protection, industrial controls
Surface-Mount (SMD) ZenerMiniaturized packaging for automated assemblyMobile devices, wearable electronics

3. Structure and Composition

Single Zener diodes consist of a heavily doped PN junction semiconductor structure, typically fabricated from silicon. The cathode terminal is marked with a band, while the anode connects to the P-type material. Advanced devices employ passivation layers (e.g., silicon dioxide) to improve stability and reliability. Common packaging includes axial leaded (DO-35, DO-41) and surface-mount (SOD-123, SOT-23) formats with glass or plastic encapsulation for environmental protection.

4. Key Technical Specifications

ParameterDescriptionImportance
Zener Voltage (Vz)Specified reverse breakdown voltage at test currentDetermines operating voltage level
Power Dissipation (Pz)Maximum power handling capabilityDefines thermal management requirements
Dynamic Impedance (Zz)AC resistance affecting voltage stabilityImpacts regulation performance
Temperature Coefficient (TC)Voltage drift per degree CelsiusCritical for precision applications
Reverse Leakage Current (Ir)Off-state current at rated voltageAffects power efficiency

5. Application Fields

Key industries include:

  • Power electronics (switching power supplies, DC-DC converters)
  • Industrial automation (PLC voltage references, sensor interfaces)
  • Consumer electronics (mobile chargers, LED drivers)
  • Automotive systems (battery management, onboard charging)
  • Test equipment (precision multimeters, calibration devices)

Example: The TL431 programmable Zener diode is widely used in SMPS feedback loops to achieve 1% voltage accuracy.

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
TI (Texas Instruments)LM4040-N1.2V-10V, 0.1% initial tolerance, SOT-23
ON Semiconductor1N47xx Series3.3V-400V, 1W-50W power range
STMicroelectronicsBZX84-C5V15.1V, 300mW, 2% tolerance, SOD-323
NexperiaPXZGxx Series2.5V-75V, AEC-Q101 automotive qualification

7. Selection Guidelines

Key considerations:

  1. Determine required Vz with 5% margin over operating current range
  2. Calculate Pz = Vz maximum expected current
  3. Select package type based on board space and thermal requirements
  4. For precision applications, prioritize TC < 100ppm/ C and low Zz
  5. Consider automotive-grade parts for harsh environments

8. Industry Trends

Current development trends include: - Miniaturization with advanced trench Zener structures - Integration with ESD protection in combo devices - Wide bandgap materials (SiC) for high-voltage applications - Improved temperature stability through laser trimming - Increased adoption in renewable energy systems for voltage monitoring - Growth in automotive electronics driving AEC-Q qualified parts

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