Diodes - Zener - Single

Image Part Number Description / PDF Quantity Rfq
1PMT5948E3/TR7

1PMT5948E3/TR7

Roving Networks / Microchip Technology

DIODE ZENER 91V 3W DO216AA

0

BZT52B12S-F2-0000HF

BZT52B12S-F2-0000HF

ZENER DIODE 12V 0.2W SOD-323

0

MMXZ5232B-TP

MMXZ5232B-TP

Micro Commercial Components (MCC)

DIODE ZENER 5.6V 200MW SOD323

89

BZX884S-B62YL

BZX884S-B62YL

Nexperia

BZX884S-B62/SOD882BD/XSON2

10000

MMBZ5231ELT1G

MMBZ5231ELT1G

Sanyo Semiconductor/ON Semiconductor

DIODE ZENER 5.1V 225MW SOT23-3

165039000

TLZ4V3B-GS18

TLZ4V3B-GS18

Vishay General Semiconductor – Diodes Division

DIODE ZENER 4.3V 500MW SOD80

0

JANTX1N4626DUR-1

JANTX1N4626DUR-1

Roving Networks / Microchip Technology

DIODE ZENER 5.6V 500MW DO213AA

0

BZX384-B62Z

BZX384-B62Z

Nexperia

DIODE ZENER 62V SOD323

0

MM1Z4750A

MM1Z4750A

Diotec Semiconductor

DIODE ZENER 27V 1W SOD123F

0

TLZ13A-GS08

TLZ13A-GS08

Vishay General Semiconductor – Diodes Division

DIODE ZENER 13V 500MW SOD80

0

CLL4750A TR PBFREE

CLL4750A TR PBFREE

Central Semiconductor

DIODE ZENER 27V 1W MELF

495725500

SMBJ4731/TR13

SMBJ4731/TR13

Roving Networks / Microchip Technology

DIODE ZENER 4.3V 2W SMBJ

0

BZD27C160P RVG

BZD27C160P RVG

TSC (Taiwan Semiconductor)

DIODE ZENER 162V 1W SUB SMA

0

TLZ18-GS18

TLZ18-GS18

Vishay General Semiconductor – Diodes Division

DIODE ZENER 18V 500MW SOD80

0

1N4743PE3/TR8

1N4743PE3/TR8

Roving Networks / Microchip Technology

DIODE ZENER 13V 1W DO204AL

0

SMBJ4739AE3/TR13

SMBJ4739AE3/TR13

Roving Networks / Microchip Technology

DIODE ZENER 9.1V 2W SMBJ

0

BZX85C3V0-TAP

BZX85C3V0-TAP

Vishay General Semiconductor – Diodes Division

DIODE ZENER 3V 1.3W DO41

0

1N4739A-TR

1N4739A-TR

Vishay General Semiconductor – Diodes Division

DIODE ZENER 9.1V 1.3W DO41

34084

JANTXV1N3029B-1

JANTXV1N3029B-1

Roving Networks / Microchip Technology

DIODE ZENER 24V 1W DO41

0

BZM55C43-TR

BZM55C43-TR

Vishay General Semiconductor – Diodes Division

DIODE ZENER 43V 500MW MICROMELF

0

Diodes - Zener - Single

1. Overview

Single Zener diodes are discrete semiconductor devices designed to operate in the reverse breakdown region, maintaining a stable voltage across a wide range of currents. Based on the Zener effect and avalanche breakdown mechanisms, these components are critical for voltage regulation, reference, and protection circuits. They serve as foundational elements in power supplies, analog circuits, and precision measurement systems, ensuring reliability in electronics ranging from consumer devices to industrial equipment.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Low-Voltage Zener (2.4V-10V)Utilizes Zener effect with sharp breakdown characteristicsVoltage references, comparator circuits
Mid-Voltage Zener (10V-100V)Combines Zener and avalanche breakdownPower supply regulation, clamping circuits
High-Voltage Zener (>100V)Primarily avalanche breakdown mechanismHigh-voltage protection, industrial controls
Surface-Mount (SMD) ZenerMiniaturized packaging for automated assemblyMobile devices, wearable electronics

3. Structure and Composition

Single Zener diodes consist of a heavily doped PN junction semiconductor structure, typically fabricated from silicon. The cathode terminal is marked with a band, while the anode connects to the P-type material. Advanced devices employ passivation layers (e.g., silicon dioxide) to improve stability and reliability. Common packaging includes axial leaded (DO-35, DO-41) and surface-mount (SOD-123, SOT-23) formats with glass or plastic encapsulation for environmental protection.

4. Key Technical Specifications

ParameterDescriptionImportance
Zener Voltage (Vz)Specified reverse breakdown voltage at test currentDetermines operating voltage level
Power Dissipation (Pz)Maximum power handling capabilityDefines thermal management requirements
Dynamic Impedance (Zz)AC resistance affecting voltage stabilityImpacts regulation performance
Temperature Coefficient (TC)Voltage drift per degree CelsiusCritical for precision applications
Reverse Leakage Current (Ir)Off-state current at rated voltageAffects power efficiency

5. Application Fields

Key industries include:

  • Power electronics (switching power supplies, DC-DC converters)
  • Industrial automation (PLC voltage references, sensor interfaces)
  • Consumer electronics (mobile chargers, LED drivers)
  • Automotive systems (battery management, onboard charging)
  • Test equipment (precision multimeters, calibration devices)

Example: The TL431 programmable Zener diode is widely used in SMPS feedback loops to achieve 1% voltage accuracy.

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
TI (Texas Instruments)LM4040-N1.2V-10V, 0.1% initial tolerance, SOT-23
ON Semiconductor1N47xx Series3.3V-400V, 1W-50W power range
STMicroelectronicsBZX84-C5V15.1V, 300mW, 2% tolerance, SOD-323
NexperiaPXZGxx Series2.5V-75V, AEC-Q101 automotive qualification

7. Selection Guidelines

Key considerations:

  1. Determine required Vz with 5% margin over operating current range
  2. Calculate Pz = Vz maximum expected current
  3. Select package type based on board space and thermal requirements
  4. For precision applications, prioritize TC < 100ppm/ C and low Zz
  5. Consider automotive-grade parts for harsh environments

8. Industry Trends

Current development trends include: - Miniaturization with advanced trench Zener structures - Integration with ESD protection in combo devices - Wide bandgap materials (SiC) for high-voltage applications - Improved temperature stability through laser trimming - Increased adoption in renewable energy systems for voltage monitoring - Growth in automotive electronics driving AEC-Q qualified parts

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