Diodes - Variable Capacitance (Varicaps, Varactors)

Image Part Number Description / PDF Quantity Rfq
BB189,115

BB189,115

NXP Semiconductors

DIODE UHF VAR CAP 32V SOD523

18000

MA27V1200L

MA27V1200L

Panasonic

DIODE VARIABLE CAP 8V SSS-MINI

12688

MMBV105GLT1

MMBV105GLT1

DIODE TUNING SS 30V SOT23

33758

1SV277TPH3F

1SV277TPH3F

Toshiba Electronic Devices and Storage Corporation

DIODE VARICAP VCO UHF USC

0

MA27V2000L

MA27V2000L

Panasonic

DIODE VARIABLE CAP 6V SSSMINI-2P

19560

SMV1231-074LF

SMV1231-074LF

Skyworks Solutions, Inc.

DIODE VARACTOR

1164018000

KVX2301-23-0/TR

KVX2301-23-0/TR

Roving Networks / Microchip Technology

SI TVAR NON HERMETIC PLASTIC SMT

0

SMV1253-040LF

SMV1253-040LF

Skyworks Solutions, Inc.

DIODE VARACTOR

21005

BBY6502VH6327XTSA1

BBY6502VH6327XTSA1

IR (Infineon Technologies)

DIODE TUNING 15V 50MA SC79

0

MA27V2200L

MA27V2200L

Panasonic

DIODE VARIABLE CAP 6V SSSMINI-2P

18971

MGV125-08

MGV125-08

Metelics (MACOM Technology Solutions)

VARACTOR DIODE,GAAS,CHIP,C01A

100225

BB179B,315

BB179B,315

NXP Semiconductors

DIODE UHF VAR CAP 32V SOD523

884014

MA46H202-1056

MA46H202-1056

Metelics (MACOM Technology Solutions)

DIODE VARACTOR DUAL GAAS

109300

1SV325,H3F

1SV325,H3F

Toshiba Electronic Devices and Storage Corporation

DIODE VARACTOR 10V ESC

0

BB181

BB181

NXP Semiconductors

VARIABLE CAPACITANCE DIODE, VERY

0

BB 804 SF2 E6327

BB 804 SF2 E6327

IR (Infineon Technologies)

VARIABLE CAPACITANCE DIODE

6000

BBY55-03WE6327

BBY55-03WE6327

IR (Infineon Technologies)

BBY55 - VARACTOR DIODE

5750

1SV305,L3F

1SV305,L3F

Toshiba Electronic Devices and Storage Corporation

DIODE VARACTOR 10V ESC

15813

MA46474-134

MA46474-134

Metelics (MACOM Technology Solutions)

DIODE,VARACTOR,GAAS CHIP

200

BB149,115

BB149,115

NXP Semiconductors

DIODE UHF VAR CAP 30V SOD323

0

Diodes - Variable Capacitance (Varicaps, Varactors)

1. Overview

Variable Capacitance Diodes (Varicaps or Varactors) are specialized semiconductor devices that exploit the voltage-dependent capacitance of a reverse-biased p-n junction. These components act as voltage-controlled capacitors, enabling electronic tuning and frequency modulation in various circuits. Their ability to provide precise capacitance adjustment without mechanical movement makes them critical in modern communication systems, signal processing, and RF/wireless applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Hyperabrupt VaractorsNon-linear C-V curve with high capacitance ratioVoltage-Controlled Oscillators (VCOs), Frequency Synthesizers
Abrupt Junction VaractorsLinear C-V characteristicsParametric Amplifiers, Tunable Filters
Double VaractorsDual back-to-back junctions for balanced operationModulators, Demodulators, Microwave Switches
High-Voltage VaractorsRated for >100V reverse biasPower Tuning Circuits, Industrial RF Equipment

3. Structure and Composition

Varactors are constructed with a p-n junction optimized for controlled depletion region expansion. Key structural elements include:

  • Doped semiconductor layers (typically silicon or GaAs)
  • Metallized contacts with passivation layers
  • Hermetic glass or plastic encapsulation
  • Specific junction geometry to define capacitance-voltage (C-V) characteristics

The depletion region width varies with reverse bias voltage, altering the effective capacitance according to the formula: C = A/(W+d), where W is depletion width and d is fixed dielectric thickness.

4. Key Technical Specifications

ParameterSignificance
Capacitance Range (Cmin-Cmax)Determines tuning range at specific bias voltages
Q-Factor (Quality Factor)Measures energy loss at operating frequencies
Breakdown Voltage (Vbr)Maximum allowable reverse voltage
Series Resistance (Rs)Affects power handling capability
Temperature CoefficientDefines capacitance stability over temperature
Capacitance Ratio (Cmax/Cmin)Indicates tuning efficiency

5. Application Fields

Major application areas include:

  • Telecommunications: Cellular base stations, Satellite receivers, Wi-Fi equipment
  • Consumer Electronics: Smartphones, Television tuners, Bluetooth devices
  • Industrial: Test and measurement equipment, RFID systems
  • Automotive: Keyless entry systems, Radar sensors
  • Specialized: Phase-locked loops (PLLs), Parametric amplifiers

Case Study: In a smartphone transceiver, varactors enable adaptive antenna tuning to maintain optimal signal strength across multiple frequency bands (700MHz-6GHz).

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
ON SemiconductorMVAM SeriesHigh Q (>1000), 12pF-50pF range
STMicroelectronicsBB8XX SeriesUltra-small SMD packaging, 1-30pF
Skyworks SolutionsSMV SeriesHigh linearity for CATV applications
NXP SemiconductorsBBY SeriesAutomotive-grade temperature stability

7. Selection Guidelines

Key selection criteria:

  • Match capacitance range to required frequency tuning range
  • Select appropriate Q-factor for target frequency (higher Q for microwave applications)
  • Consider temperature stability requirements
  • Evaluate package type (SMD vs. through-hole) for PCB integration
  • Verify voltage ratings against circuit requirements
  • Assess non-linearity requirements for modulation applications

For high-reliability applications, prioritize devices with AEC-Q101 automotive qualification.

8. Industry Trends

Current development trends include:

  • Increased integration with MEMS technology for hybrid tuning solutions
  • Development of GaN-based varactors for millimeter-wave applications
  • Improved capacitance ratios through advanced junction engineering
  • Nanometer-scale dielectrics for ultra-low voltage operation
  • Embedded varactors in SiP (System-in-Package) modules

The market is projected to grow at 6.2% CAGR through 2027, driven by 5G infrastructure and IoT connectivity demands.

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