Diodes - Variable Capacitance (Varicaps, Varactors)

Image Part Number Description / PDF Quantity Rfq
1SV280,H3F

1SV280,H3F

Toshiba Electronic Devices and Storage Corporation

DIODE VARACTOR 15V ESC

82151

MA27V0500L

MA27V0500L

Panasonic

DIODE VARIABLE CAP 10V SSS-MINI

7390

SMV1213-079LF

SMV1213-079LF

Skyworks Solutions, Inc.

DIODE VARACTOR

297036000

BB837E6327

BB837E6327

IR (Infineon Technologies)

BB837 - SAT TUNER VARIABLE CAPAC

66600

SMV1702-011LF

SMV1702-011LF

Skyworks Solutions, Inc.

SOD323 N-TYPE SINGLE LEAD FREE

1561215000

BB202,135

BB202,135

NXP Semiconductors

DIODE VAR CAP 6V 10MA SOD523

0

BB201,215

BB201,215

NXP Semiconductors

DIODE VAR CAP DUAL 15V SOT-23

798

BB 664 H7902

BB 664 H7902

IR (Infineon Technologies)

VARIABLE CAPACITANCE DIODE

26666

MAVR-011005-12790T

MAVR-011005-12790T

Metelics (MACOM Technology Solutions)

DIODE,VARACTOR,SC79

290681000

SMV1247-079LF

SMV1247-079LF

Skyworks Solutions, Inc.

DIODE VARACTOR 15V 20MA SC-79

2147483647

SMV1253-079LF

SMV1253-079LF

Skyworks Solutions, Inc.

DIODE VAR HYPRABRUPT JUNC TUNING

2981

BB173X

BB173X

NXP Semiconductors

DIODE VHF VAR CAP 32V SOD523

4562

MA46H072-1056

MA46H072-1056

Metelics (MACOM Technology Solutions)

DIODE, VARACTOR, GAAS

99

MGV075-10

MGV075-10

Metelics (MACOM Technology Solutions)

DIODE,COM, VARACTOR, GAAS-CHIP

100175

MA46473-134

MA46473-134

Metelics (MACOM Technology Solutions)

DIODE,VARACTOR,GAAS

0

SMVA1705-004LF

SMVA1705-004LF

Skyworks Solutions, Inc.

DIODE VARACTOR

244

MMVL105GT1

MMVL105GT1

DIODE VAR CAP SINGLE 30V

75000

BB535E7904HTSA1

BB535E7904HTSA1

IR (Infineon Technologies)

DIODE VAR CAP 30V 20MA SOD-323

13459

BB555H7902XTSA1

BB555H7902XTSA1

IR (Infineon Technologies)

VARIABLE CAPACITANCE DIODE

294000

1SV282TPH3F

1SV282TPH3F

Toshiba Electronic Devices and Storage Corporation

DIODE VARACTOR 34V SINGLE ESC

87

Diodes - Variable Capacitance (Varicaps, Varactors)

1. Overview

Variable Capacitance Diodes (Varicaps or Varactors) are specialized semiconductor devices that exploit the voltage-dependent capacitance of a reverse-biased p-n junction. These components act as voltage-controlled capacitors, enabling electronic tuning and frequency modulation in various circuits. Their ability to provide precise capacitance adjustment without mechanical movement makes them critical in modern communication systems, signal processing, and RF/wireless applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Hyperabrupt VaractorsNon-linear C-V curve with high capacitance ratioVoltage-Controlled Oscillators (VCOs), Frequency Synthesizers
Abrupt Junction VaractorsLinear C-V characteristicsParametric Amplifiers, Tunable Filters
Double VaractorsDual back-to-back junctions for balanced operationModulators, Demodulators, Microwave Switches
High-Voltage VaractorsRated for >100V reverse biasPower Tuning Circuits, Industrial RF Equipment

3. Structure and Composition

Varactors are constructed with a p-n junction optimized for controlled depletion region expansion. Key structural elements include:

  • Doped semiconductor layers (typically silicon or GaAs)
  • Metallized contacts with passivation layers
  • Hermetic glass or plastic encapsulation
  • Specific junction geometry to define capacitance-voltage (C-V) characteristics

The depletion region width varies with reverse bias voltage, altering the effective capacitance according to the formula: C = A/(W+d), where W is depletion width and d is fixed dielectric thickness.

4. Key Technical Specifications

ParameterSignificance
Capacitance Range (Cmin-Cmax)Determines tuning range at specific bias voltages
Q-Factor (Quality Factor)Measures energy loss at operating frequencies
Breakdown Voltage (Vbr)Maximum allowable reverse voltage
Series Resistance (Rs)Affects power handling capability
Temperature CoefficientDefines capacitance stability over temperature
Capacitance Ratio (Cmax/Cmin)Indicates tuning efficiency

5. Application Fields

Major application areas include:

  • Telecommunications: Cellular base stations, Satellite receivers, Wi-Fi equipment
  • Consumer Electronics: Smartphones, Television tuners, Bluetooth devices
  • Industrial: Test and measurement equipment, RFID systems
  • Automotive: Keyless entry systems, Radar sensors
  • Specialized: Phase-locked loops (PLLs), Parametric amplifiers

Case Study: In a smartphone transceiver, varactors enable adaptive antenna tuning to maintain optimal signal strength across multiple frequency bands (700MHz-6GHz).

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Features
ON SemiconductorMVAM SeriesHigh Q (>1000), 12pF-50pF range
STMicroelectronicsBB8XX SeriesUltra-small SMD packaging, 1-30pF
Skyworks SolutionsSMV SeriesHigh linearity for CATV applications
NXP SemiconductorsBBY SeriesAutomotive-grade temperature stability

7. Selection Guidelines

Key selection criteria:

  • Match capacitance range to required frequency tuning range
  • Select appropriate Q-factor for target frequency (higher Q for microwave applications)
  • Consider temperature stability requirements
  • Evaluate package type (SMD vs. through-hole) for PCB integration
  • Verify voltage ratings against circuit requirements
  • Assess non-linearity requirements for modulation applications

For high-reliability applications, prioritize devices with AEC-Q101 automotive qualification.

8. Industry Trends

Current development trends include:

  • Increased integration with MEMS technology for hybrid tuning solutions
  • Development of GaN-based varactors for millimeter-wave applications
  • Improved capacitance ratios through advanced junction engineering
  • Nanometer-scale dielectrics for ultra-low voltage operation
  • Embedded varactors in SiP (System-in-Package) modules

The market is projected to grow at 6.2% CAGR through 2027, driven by 5G infrastructure and IoT connectivity demands.

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