Diodes - RF

Image Part Number Description / PDF Quantity Rfq
MA4P7455ST-287T

MA4P7455ST-287T

Metelics (MACOM Technology Solutions)

DIODE,PIN,PLASTIC,LEADFREE

3000

MSS30-154-E28

MSS30-154-E28

Metelics (MACOM Technology Solutions)

SCHOTTKY DIODE,BEAMLEAD, E28-S

100

SMS3924-040LF

SMS3924-040LF

Skyworks Solutions, Inc.

DIODE SCHOTTKY 70V 75MW SOD882

121179000

SMS7621-005LF

SMS7621-005LF

Skyworks Solutions, Inc.

RF DIODE SCHOTTKY 2V 75MW SOT23

84349

UPP1001E3/TR13

UPP1001E3/TR13

Roving Networks / Microchip Technology

RF DIODE PIN 100V 2.5W DO216

0

MA4P404-258

MA4P404-258

Metelics (MACOM Technology Solutions)

DIODE,PIN,CERAMIC_PKG,SI,ODS-258

60

BAS70-06E6327

BAS70-06E6327

IR (Infineon Technologies)

BAS70 - HIGH SPEED SWITCHING, CL

222000

BAP50-02,115

BAP50-02,115

NXP Semiconductors

PIN DIODE, 50V

0

BAP64-05W-TP

BAP64-05W-TP

Micro Commercial Components (MCC)

RF DIODE PIN 175V 200MW SOT323

0

SMP1352-040LF

SMP1352-040LF

Skyworks Solutions, Inc.

RF DIODE PIN 200V 750MW 0402

1449261000

1PS79SB17,115

1PS79SB17,115

Nexperia

RF DIODE SCHOTTKY 4V SOD523

3123

MPP4205-206

MPP4205-206

Roving Networks / Microchip Technology

SI PIN NON HERMETIC MMSM

0

MPP4205A-206

MPP4205A-206

Roving Networks / Microchip Technology

SI PIN NON HERMETIC MMSM

254

MMBD352WT1G

MMBD352WT1G

Sanyo Semiconductor/ON Semiconductor

RF DIODE SCHOTTKY 7V 200MW SC70

2172

MADP-007455-12790T

MADP-007455-12790T

Metelics (MACOM Technology Solutions)

RF DIODE PIN 100V

5884

1SV271TPH3F

1SV271TPH3F

Toshiba Electronic Devices and Storage Corporation

RF DIODE PIN 50V USC

4259

MSS60-B46-E45

MSS60-B46-E45

Metelics (MACOM Technology Solutions)

SCHOTTKY DIODE,BEAMLEAD,PACKAGE

100

LXP1002-23-0/TR

LXP1002-23-0/TR

Roving Networks / Microchip Technology

SI PIN NON HERMETIC PLASTIC SMT

0

MMP7022-11

MMP7022-11

Metelics (MACOM Technology Solutions)

DIODE,PIN,DIE

100

RN242CST2RA

RN242CST2RA

ROHM Semiconductor

RF DIODE PIN 30V VMN2

2

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

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