Diodes - RF

Image Part Number Description / PDF Quantity Rfq
BAR61E6327HTSA1

BAR61E6327HTSA1

IR (Infineon Technologies)

RF DIODE PIN 100V 250MW SOT143

7

MA4E932B-186

MA4E932B-186

Metelics (MACOM Technology Solutions)

DIODE,SCHOTTKY,QUAD,SURFACE_MT

50100

MSD711-19-1

MSD711-19-1

Metelics (MACOM Technology Solutions)

DIODE,STEPRECOVERY,MSD711-19-1

95

BA679S-M-08

BA679S-M-08

Vishay General Semiconductor – Diodes Division

RF DIODE SOD80 MINIMELF

0

MADP-007448-0287BT

MADP-007448-0287BT

Metelics (MACOM Technology Solutions)

DIODE,PIN,PLASTIC,ST,LEADFREE

299015000

MSS30-154-B10B

MSS30-154-B10B

Metelics (MACOM Technology Solutions)

DIODE,SCHOTTKY,BEAM LEAD

0

BAP50-05,215

BAP50-05,215

NXP Semiconductors

RF DIODE PIN 50V 250MW TO236AB

4248

MA4P4001B-402

MA4P4001B-402

Metelics (MACOM Technology Solutions)

RF DIODE PIN 100V 2.5W AXIAL

7

MEST2G-150-10-CM32

MEST2G-150-10-CM32

Metelics (MACOM Technology Solutions)

RF DIODE PIN CM32

655

MA4P7102B-401T

MA4P7102B-401T

Metelics (MACOM Technology Solutions)

DIODE,PIN,CERAMIC,AXIAL,HI-PAX

491

BAP51-02-TP

BAP51-02-TP

Micro Commercial Components (MCC)

RF DIODE PIN 60V 715MW SOD523

709

MA4AGFCP910

MA4AGFCP910

Metelics (MACOM Technology Solutions)

RF DIODE PIN 75V 50MW 2-FLIPCHIP

100

SMP1304-085LF

SMP1304-085LF

Skyworks Solutions, Inc.

RF DIODE PIN 200V 2.5W 3QFN

284018000

SMP1331-079LF

SMP1331-079LF

Skyworks Solutions, Inc.

RF DIODE PIN 200V 250MW SC79

33000

GA01PNS80-220

GA01PNS80-220

GeneSiC Semiconductor

RF DIODE PIN 8000V

0

MSS40-141-E25

MSS40-141-E25

Metelics (MACOM Technology Solutions)

SCHOTTKY DIODE,BEAMLEAD, E25-1

75

1SV263-TL-E

1SV263-TL-E

Sanyo Semiconductor/ON Semiconductor

RF DIODE PIN 50V 100MW 3MCP

2913

1N5711

1N5711

NTE Electronics, Inc.

D-SCHOTTKY 70V

3135

CLA4606-000

CLA4606-000

Skyworks Solutions, Inc.

DIODE LIMITER SILICON 45-75V

200

GA01PNS150-201

GA01PNS150-201

GeneSiC Semiconductor

SIC DIODE 15000V 1A DO-201

10

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

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