Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
UF5407

UF5407

NTE Electronics, Inc.

R-800V 3A ULTRA FAST

405

NTE5914

NTE5914

NTE Electronics, Inc.

R-100PRV 20A CATH CASE

6

GI850/MR850

GI850/MR850

NTE Electronics, Inc.

R- 50 PRV 3A

552

NTE117

NTE117

NTE Electronics, Inc.

R-SI-600PRV 1AMP

152

NTE6033

NTE6033

NTE Electronics, Inc.

R-1KV PRV 40A FAST REC AK

6

NTE6071

NTE6071

NTE Electronics, Inc.

R-1600V 85A ANODE CASE

95

RGP15D

RGP15D

NTE Electronics, Inc.

R-200V 1.5A FAST SW

183

NTE5830

NTE5830

NTE Electronics, Inc.

R-50 PRV 3A CATH CASE

27

NTE5808

NTE5808

NTE Electronics, Inc.

R-800 PRV 3A AXIAL LEAD

2628

NTE621

NTE621

NTE Electronics, Inc.

D-400V 1AMP SURFACE MNT

3222

NTE5952

NTE5952

NTE Electronics, Inc.

R-600PRV 15A CATH CASE

21

NTE5877

NTE5877

NTE Electronics, Inc.

R-300PRV 12A ANODE CASE

29

GI851/MR851

GI851/MR851

NTE Electronics, Inc.

R- 100 PRV 3A

935

UF5408

UF5408

NTE Electronics, Inc.

R-1000V 3A ULTRA FAST

328

NTE580

NTE580

NTE Electronics, Inc.

R-SI 600V 3A FAST REC

1101

NTE518

NTE518

NTE Electronics, Inc.

R-SI 10KV 25MA

200

NTE5995

NTE5995

NTE Electronics, Inc.

R-600 PRV 40A ANODE CASE

110

RGP15J

RGP15J

NTE Electronics, Inc.

R-600V 1.5A FAST SW

3166

UF4001

UF4001

NTE Electronics, Inc.

R-50V 1A ULTRA FAST

271

NTE5993

NTE5993

NTE Electronics, Inc.

R-500 PRV 40A ANODE CASE

32

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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