Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
BAV70/S911R

BAV70/S911R

Nexperia

HIGH SPEED SWITCHING DIODES

18000

PMEG45A10EPD

PMEG45A10EPD

Nexperia

PMEG45A10EPD - 45 V, 10 A LOW VF

5000

PMEG3010BEAZ

PMEG3010BEAZ

Nexperia

DIODE SCHOTTKY 30V 1A SOD323

0

PMEG060T080CLPEZ

PMEG060T080CLPEZ

Nexperia

PMEG060T080CLPE/SOT1289B/CFP15

0

BAV199/ZL215

BAV199/ZL215

Nexperia

BAV199W - RECTIFIER DIODE

0

BAT760Z

BAT760Z

Nexperia

DIODE SCHOTTKY 20V 1A SOD323

0

PMEG3005EEFZ

PMEG3005EEFZ

Nexperia

PMEG3005EEF/SOD972/DFN0603

0

BAT760F

BAT760F

Nexperia

DIODE SCHOTTKY 20V 1A SOD323

0

RB521S30YL

RB521S30YL

Nexperia

RB521S30/SOD523/SC-79

0

BAS316/ZL135

BAS316/ZL135

Nexperia

BAS316 - RECTIFIER DIODE

80000

BAT54GW,115

BAT54GW,115

Nexperia

RECTIFIER, SCHOTTKY, 0.2A, 30V,

0

PMEG6010AED,115

PMEG6010AED,115

Nexperia

DIODE SCHOTTKY 60V 1A 6TSOP

0

PMEG4010ESBZ

PMEG4010ESBZ

Nexperia

DIODE SCHOTTKY 40V 1A DSN1006-2

0

ES2DRX

ES2DRX

Nexperia

DIODE GEN PURP 200V 2A SOD123W

0

PMEG4010AESBZ

PMEG4010AESBZ

Nexperia

DIODE SCHOTTKY 40V 1A DSN1006-2

0

BAS21/8VL

BAS21/8VL

Nexperia

DIODE GP 250V 200MA TO236AB

0

BAS40/ZLR

BAS40/ZLR

Nexperia

DIODE SCHOTTKY 40V 120MA TO236AB

0

PMEG3010ESBZ

PMEG3010ESBZ

Nexperia

DIODE SCHOTTKY 30V 1A DSN1006-2

0

PMEG6010EP/6X

PMEG6010EP/6X

Nexperia

DIODE SCHOTTKY 60V 1A CFP5

0

PMEG1201AESFYL

PMEG1201AESFYL

Nexperia

DIODE SCHOTTKY 12V 0.1A SOD962

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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