Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
JAN1N6643

JAN1N6643

Roving Networks / Microchip Technology

DIODE GEN PURP 50V 300MA AXIAL

0

S2040

S2040

Roving Networks / Microchip Technology

RECTIFIER

0

HSM320J/TR13

HSM320J/TR13

Roving Networks / Microchip Technology

DIODE SCHOTTKY 3A 20V SMCJ

0

JANTX1N3595A-1

JANTX1N3595A-1

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DIODE GEN PURP 125V 150MA DO35

0

UFR7015

UFR7015

Roving Networks / Microchip Technology

RECTIFIER

0

1N5296UR-1

1N5296UR-1

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CURRENT REGULATOR DIODE

0

HSM380G/TR13

HSM380G/TR13

Roving Networks / Microchip Technology

DIODE SCHOTTKY 80V 3A DO215AB

0

S25140

S25140

Roving Networks / Microchip Technology

RECTIFIER

0

HSM590GE3/TR13

HSM590GE3/TR13

Roving Networks / Microchip Technology

DIODE SCHOTTKY 90V 5A DO215AB

0

JANS1N6677UR-1

JANS1N6677UR-1

Roving Networks / Microchip Technology

DIODE SCHOTTKY 40V 200MA DO213AA

0

1N3910AR

1N3910AR

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FAST RECOVERY RECTIFIER

0

1N6642UB2R

1N6642UB2R

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DIODE GEN PURPOSE

0

R21140

R21140

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RECTIFIER

0

JANTXV1N6642UBCA

JANTXV1N6642UBCA

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DIODE GEN PURP 75V 300MA UB

0

JANTX1N1615R

JANTX1N1615R

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DIODE GEN PURP 400V 15A DO203AA

0

1N3909AR

1N3909AR

Roving Networks / Microchip Technology

FAST RECOVERY RECTIFIER

0

R3560

R3560

Roving Networks / Microchip Technology

RECTIFIER

0

UES1305SM

UES1305SM

Roving Networks / Microchip Technology

RECTIFIER

0

1N3913

1N3913

Roving Networks / Microchip Technology

FAST RECOVERY RECTIFIER

0

JAN1N5554

JAN1N5554

Roving Networks / Microchip Technology

DIODE GEN PURP 1KV 3A AXIAL

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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