Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
MDO1201-22N1

MDO1201-22N1

Wickmann / Littelfuse

DIODE GEN PURP 2.2KV 1950A

0

E1250HC45E

E1250HC45E

Wickmann / Littelfuse

FAST DIODE

0

DS2-08A

DS2-08A

Wickmann / Littelfuse

DIODE GEN PURP 800V 3.6A AXIAL

0

MDO500-16N1

MDO500-16N1

Wickmann / Littelfuse

DIODE GEN PURP 1.6KV 560A Y1-CU

0

M1022LC160

M1022LC160

Wickmann / Littelfuse

FAST DIODE

0

M0437WC080

M0437WC080

Wickmann / Littelfuse

FAST DIODE

0

M0790YC200

M0790YC200

Wickmann / Littelfuse

FAST DIODE

0

W0642WC160

W0642WC160

Wickmann / Littelfuse

RECTIFIER DIODE

0

MDO500-14N1

MDO500-14N1

Wickmann / Littelfuse

DIODE GEN PURP 1.4KV 560A Y1-CU

0

E3000EC45E

E3000EC45E

Wickmann / Littelfuse

FAST DIODE

0

DSEP6-06BS-TUB

DSEP6-06BS-TUB

Wickmann / Littelfuse

POWER DIODE DISCRETES-FRED TO-25

0

W1263YC200

W1263YC200

Wickmann / Littelfuse

RECTIFIER DIODE

0

E2400EC45E

E2400EC45E

Wickmann / Littelfuse

FAST DIODE

0

W3842MC280

W3842MC280

Wickmann / Littelfuse

RECTIFIER DIODE

0

M0955JK250

M0955JK250

Wickmann / Littelfuse

FAST DIODE

0

DPG15I600APA

DPG15I600APA

Wickmann / Littelfuse

PWR DIODE DISC-FRED TO-220AB / T

0

DMA10IM1600UZ-TUB

DMA10IM1600UZ-TUB

Wickmann / Littelfuse

POWER DIODE DISCRETES-RECTIFIER

1050

DSEP60-12B

DSEP60-12B

Wickmann / Littelfuse

POWER DIODE DISCRETES-FRED TO-24

8130

D8020L

D8020L

Wickmann / Littelfuse

DIODE GEN PURP 800V 12.7A TO220

0

D4025L

D4025L

Wickmann / Littelfuse

DIODE GEN PURP 400V 15.9A TO220

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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