Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
MDO500-20N1

MDO500-20N1

Wickmann / Littelfuse

DIODE GEN PURP 2KV 560A Y1-CU

0

M1022LC120

M1022LC120

Wickmann / Littelfuse

FAST DIODE

0

DSS6-0025BS-TUB

DSS6-0025BS-TUB

Wickmann / Littelfuse

POWER DIODE DISCRETES-SCHOTTKY T

2380

W0944WC120

W0944WC120

Wickmann / Littelfuse

RECTIFIER DIODE

0

W108CED220

W108CED220

Wickmann / Littelfuse

RECTIFIER DIODE

0

DS35-12A

DS35-12A

Wickmann / Littelfuse

DIODE GEN PURP 1.2KV 49A DO203AB

0

DMA50P1600HB

DMA50P1600HB

Wickmann / Littelfuse

POWER DIODE DISCRETES-RECTIFIER

0

W1032LC500

W1032LC500

Wickmann / Littelfuse

RECTIFIER DIODE

0

DSA15IM45UC-TRL

DSA15IM45UC-TRL

Wickmann / Littelfuse

POWER DIODE DISCRETES-SCHOTTKY T

0

DSA15IM150UC-TUB

DSA15IM150UC-TUB

Wickmann / Littelfuse

POWER DIODE DISCRETES-SCHOTTKY T

2450

W5984TJ360

W5984TJ360

Wickmann / Littelfuse

RECTIFIER DIODE

0

W1980JK180

W1980JK180

Wickmann / Littelfuse

RECTIFIER DIODE

0

DPF15I600APA

DPF15I600APA

Wickmann / Littelfuse

PWR DIODE DISC-FRED TO-220AB / T

0

W1748LC180

W1748LC180

Wickmann / Littelfuse

RECTIFIER DIODE

0

W1748LC250

W1748LC250

Wickmann / Littelfuse

RECTIFIER DIODE

0

DSP45-18A

DSP45-18A

Wickmann / Littelfuse

POWER DIODE DISCRETES-RECTIFIER

30

DS75-12B

DS75-12B

Wickmann / Littelfuse

DIODE GEN PURP 1.2KV 110A DO203

0

DHG5I600PM

DHG5I600PM

Wickmann / Littelfuse

DIODE GEN PURP 600V 5A TO220ACFP

50

W2054NC450

W2054NC450

Wickmann / Littelfuse

RECTIFIER DIODE

0

DSS6-015AS-TUB

DSS6-015AS-TUB

Wickmann / Littelfuse

POWER DIODE DISCRETES-SCHOTTKY T

70

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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