Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
V10P45HM3_A/I

V10P45HM3_A/I

Vishay General Semiconductor – Diodes Division

DIODE SCHOTTKY 45V 10A TO277A

0

ES1PC-M3/85A

ES1PC-M3/85A

Vishay General Semiconductor – Diodes Division

DIODE GEN PURP 150V 1A DO220AA

0

BAV19W-E3-08

BAV19W-E3-08

Vishay General Semiconductor – Diodes Division

DIODE GEN PURP 100V 250MA SOD123

12093

VS-10BQ015-M3/5BT

VS-10BQ015-M3/5BT

Vishay General Semiconductor – Diodes Division

DIODE SCHOTTKY 15V 1A DO214AA

27653

MMBD914-E3-08

MMBD914-E3-08

Vishay General Semiconductor – Diodes Division

DIODE GEN PURP 100V 200MA SOT23

25

BYM10-600HE3/97

BYM10-600HE3/97

Vishay General Semiconductor – Diodes Division

DIODE GEN PURP 600V 1A DO213AB

0

AR4PK-M3/87A

AR4PK-M3/87A

Vishay General Semiconductor – Diodes Division

DIODE AVALANCHE 800V 1.8A TO277A

0

MURS120-E3/52T

MURS120-E3/52T

Vishay General Semiconductor – Diodes Division

DIODE GP 200V 1A DO214AA

2897

V15P8-M3/87A

V15P8-M3/87A

Vishay General Semiconductor – Diodes Division

DIODE SCHOTTKY 80V 4.6A TO277A

0

FES16FT-E3/45

FES16FT-E3/45

Vishay General Semiconductor – Diodes Division

DIODE GEN PURP 300V 16A TO220AC

0

SS2FL4HM3/I

SS2FL4HM3/I

Vishay General Semiconductor – Diodes Division

DIODE SCHOTTKY 40V 2A DO-219AB

0

VS-STPS20L15GL-M3

VS-STPS20L15GL-M3

Vishay General Semiconductor – Diodes Division

DIODE SCHOTTKY 15V 20A TO263AB

0

S4PK-M3/87A

S4PK-M3/87A

Vishay General Semiconductor – Diodes Division

DIODE GEN PURP 800V 4A TO277A

0

MBR1045-E3/45

MBR1045-E3/45

Vishay General Semiconductor – Diodes Division

DIODE SCHOTTKY 45V 10A TO220AC

0

VS-E4PU6006LHN3

VS-E4PU6006LHN3

Vishay General Semiconductor – Diodes Division

DIODE GEN PURP 600V 60A TO247AD

255

UH2CHE3_A/I

UH2CHE3_A/I

Vishay General Semiconductor – Diodes Division

DIODE GEN PURP 150V 2A DO214AA

0

FESB16HTHE3/81

FESB16HTHE3/81

Vishay General Semiconductor – Diodes Division

DIODE GEN PURP 500V 16A TO263AB

0

VS-2EFU06HM3/I

VS-2EFU06HM3/I

Vishay General Semiconductor – Diodes Division

DIODE GEN PURP 600V 2A DO219AB

0

SS12P2LHM3_A/H

SS12P2LHM3_A/H

Vishay General Semiconductor – Diodes Division

DIODE SCHOTTKY 20V 12A TO277A

0

1N6478-E3/97

1N6478-E3/97

Vishay General Semiconductor – Diodes Division

DIODE GEN PURP 50V 1A DO213AB

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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