Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
MUR340SB M4G

MUR340SB M4G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 400V 3A DO214AA

0

SSL24HM4G

SSL24HM4G

TSC (Taiwan Semiconductor)

DIODE SCHOTTKY 40V 2A DO214AA

0

SF13G R0G

SF13G R0G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 150V 1A DO204AL

0

LL4001G L0G

LL4001G L0G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 50V 1A MELF

0

SF42GHA0G

SF42GHA0G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 100V 4A DO201AD

0

2A07GHR0G

2A07GHR0G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 2A DO204AC

0

RSFJLHRQG

RSFJLHRQG

TSC (Taiwan Semiconductor)

DIODE GEN PURP 600V 500MA SUBSMA

0

HS1FL R3G

HS1FL R3G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 300V 1A SUB SMA

0

ES1DHR3G

ES1DHR3G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 200V 1A DO214AC

0

SK515BHR5G

SK515BHR5G

TSC (Taiwan Semiconductor)

DIODE SCHOTTKY 150V 5A DO214AA

0

RS3MHR7G

RS3MHR7G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 3A DO214AB

0

HS1B M2G

HS1B M2G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 100V 1A DO214AC

0

HS2JA R3G

HS2JA R3G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 600V 1.5A DO214AC

3400

RS2DAHR3G

RS2DAHR3G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 200V 1.5A DO214AC

0

S1DLHRQG

S1DLHRQG

TSC (Taiwan Semiconductor)

DIODE GEN PURP 200V 1A SUB SMA

0

MBRF10100 C0G

MBRF10100 C0G

TSC (Taiwan Semiconductor)

DIODE SCHOTTKY 100V 10A ITO220AC

0

RS1AHR3G

RS1AHR3G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 50V 1A DO214AC

0

SR505HR0G

SR505HR0G

TSC (Taiwan Semiconductor)

DIODE SCHOTTKY 50V 5A DO201AD

0

1N4006G A0G

1N4006G A0G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 800V 1A DO204AL

0

3A100HR0G

3A100HR0G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 3A DO204AC

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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