Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
SS210LHRQG

SS210LHRQG

TSC (Taiwan Semiconductor)

DIODE SCHOTTKY 100V 2A SUB SMA

0

1N5398G R0G

1N5398G R0G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 800V 1.5A DO204AC

0

SF28GHA0G

SF28GHA0G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 600V 2A DO204AC

0

SS320 V6G

SS320 V6G

TSC (Taiwan Semiconductor)

DIODE SCHOTTKY 3A 200V DO-214AB

0

SF46GHR0G

SF46GHR0G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 400V 4A DO201AD

0

S1AL R3G

S1AL R3G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 50V 1A SUB SMA

0

SF21GHR0G

SF21GHR0G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 50V 2A DO204AC

0

SF22G R0G

SF22G R0G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 100V 2A DO204AC

0

S1JFS MWG

S1JFS MWG

TSC (Taiwan Semiconductor)

DIODE, 1A, 600V, SOD-128

14000

HER201G R0G

HER201G R0G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 50V 2A DO204AC

0

HER203G A0G

HER203G A0G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 200V 2A DO204AC

2610

SS14L R3G

SS14L R3G

TSC (Taiwan Semiconductor)

DIODE SCHOTTKY 40V 1A SUB SMA

6117

SK320B M4G

SK320B M4G

TSC (Taiwan Semiconductor)

DIODE SCHOTTKY 200V 3A DO214AA

0

MUR4L60 A0G

MUR4L60 A0G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 600V 4A DO201AD

0

SK55B R5G

SK55B R5G

TSC (Taiwan Semiconductor)

DIODE SCHOTTKY 50V 5A DO214AA

0

SK320A M2G

SK320A M2G

TSC (Taiwan Semiconductor)

DIODE SCHOTTKY 200V 3A DO214AC

0

HERF1007GAHC0G

HERF1007GAHC0G

TSC (Taiwan Semiconductor)

DIODE, HIGH EFFICIENT

1928

SFAF806G C0G

SFAF806G C0G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 400V 8A ITO220AC

0

SFF1008GA C0G

SFF1008GA C0G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 600V 10A ITO220AB

0

SF66G R0G

SF66G R0G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 400V 6A DO201AD

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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