Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
EM 1Y

EM 1Y

Sanken Electric Co., Ltd.

DIODE GEN PURP 100V 1A AXIAL

0

SJPJ-L3VR

SJPJ-L3VR

Sanken Electric Co., Ltd.

DIODE SCHOTTKY SMD

0

SJPB-D6VL

SJPB-D6VL

Sanken Electric Co., Ltd.

DIODE SCHOTTKY SMD

0

EU01ZV0

EU01ZV0

Sanken Electric Co., Ltd.

DIODE GEN PURP 200V 250MA AXIAL

0

SJPB-H6

SJPB-H6

Sanken Electric Co., Ltd.

DIODE SCHOTTKY 60V 2A SJP

0

AU02

AU02

Sanken Electric Co., Ltd.

DIODE GEN PURP 400V 800MA AXIAL

0

EU02AV0

EU02AV0

Sanken Electric Co., Ltd.

DIODE GEN PURP 600V 1A AXIAL

0

EL 1ZV

EL 1ZV

Sanken Electric Co., Ltd.

DIODE GEN PURP 200V 1.5A AXIAL

0

AU02AWK

AU02AWK

Sanken Electric Co., Ltd.

DIODE GEN PURP 600V 800MA AXIAL

0

AU02ZV0

AU02ZV0

Sanken Electric Co., Ltd.

DIODE GEN PURP 200V 800MA AXIAL

0

AU01Z

AU01Z

Sanken Electric Co., Ltd.

DIODE GEN PURP 200V 500MA AXIAL

0

RF 1BV

RF 1BV

Sanken Electric Co., Ltd.

DIODE GEN PURP 800V 600MA AXIAL

0

EK 09V0

EK 09V0

Sanken Electric Co., Ltd.

DIODE SCHOTTKY 90V 700MA AXIAL

0

AL01ZWK

AL01ZWK

Sanken Electric Co., Ltd.

DIODE GEN PURP 200V 1A AXIAL

0

AM01ZV0

AM01ZV0

Sanken Electric Co., Ltd.

DIODE GEN PURP 200V 1A AXIAL

0

RG 2AV

RG 2AV

Sanken Electric Co., Ltd.

DIODE GEN PURP 600V 1A AXIAL

0

SJPX-H3VL

SJPX-H3VL

Sanken Electric Co., Ltd.

DIODE GEN PURP 300V 2A 2SMD

0

EM01Z

EM01Z

Sanken Electric Co., Ltd.

DIODE GEN PURP 200V 1A AXIAL

0

SJPX-F2VL

SJPX-F2VL

Sanken Electric Co., Ltd.

DIODE GEN PURP 200V 1.5A 2SMD

0

AK 06V0

AK 06V0

Sanken Electric Co., Ltd.

DIODE SCHOTTKY 60V 700MA AXIAL

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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