Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
R5031613FSWA

R5031613FSWA

Powerex, Inc.

DIODE GEN PURP 1.6KV 125A DO205

0

A187D

A187D

Powerex, Inc.

DIODE GEN PURP 400V 150A DO205AA

0

R7220206HSOO

R7220206HSOO

Powerex, Inc.

DIODE GEN PURP 200V 650A DO200AB

0

R7001003XXUA

R7001003XXUA

Powerex, Inc.

DIODE GEN PURP 1KV 300A DO200

0

A187PD

A187PD

Powerex, Inc.

DIODE GEN PURP 1.4KV 150A DO205

0

R6000230XXYA

R6000230XXYA

Powerex, Inc.

RECTIFIER STUD MOUNT FORWARD DO-

0

R6020822PSYA

R6020822PSYA

Powerex, Inc.

DIODE GEN PURP 800V 220A DO205AB

0

R7013603XXUA

R7013603XXUA

Powerex, Inc.

DIODE GEN PURP 3.6KV 300A DO200

0

R7000804XXUA

R7000804XXUA

Powerex, Inc.

DIODE GEN PURP 800V 450A DO200AA

0

A180B

A180B

Powerex, Inc.

DIODE GEN PURP 200V 150A DO205AA

0

R7S00416XX

R7S00416XX

Powerex, Inc.

DIODE GP 400V 1600A DO200AA R62

0

RA201236XX

RA201236XX

Powerex, Inc.

DIODE GP 1.2KV 3600A POWRDISC

0

1N3269R

1N3269R

Powerex, Inc.

DIODE GEN PURP 600V 160A DO205AB

0

R5020413LSWA

R5020413LSWA

Powerex, Inc.

DIODE GEN PURP 400V 125A DO205AA

0

R7011004XXUA

R7011004XXUA

Powerex, Inc.

DIODE GEN PURP 1KV 450A DO200

0

1N4044

1N4044

Powerex, Inc.

DIODE GEN PURP 50V 275A DO205AB

26

R6000625XXYA

R6000625XXYA

Powerex, Inc.

RECTIFIER STUD MOUNT FORWARD DO-

0

R7221606ASOO

R7221606ASOO

Powerex, Inc.

DIODE GP 1.6KV 650A DO200AB

0

R9G02012XX

R9G02012XX

Powerex, Inc.

DIODE GEN PURP 2KV 1200A DO200AB

0

CS240610

CS240610

Powerex, Inc.

DIODE GP 600V 100A POWRBLOK

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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