Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
A170P

A170P

Powerex, Inc.

DIODE GEN PURP 1KV 100A DO205

0

R7000205XXUA

R7000205XXUA

Powerex, Inc.

DIODE GEN PURP 200V 550A DO200AA

0

R6200450XXOO

R6200450XXOO

Powerex, Inc.

DIODE GP 400V 500A DO200AA R62

0

R6021022PSYA

R6021022PSYA

Powerex, Inc.

DIODE GEN PURP 1KV 220A DO205

0

R7200206XXOO

R7200206XXOO

Powerex, Inc.

DIODE GEN PURP 200V 600A DO200AB

0

R7S01416XX

R7S01416XX

Powerex, Inc.

RECTIFIER DISC R7S

0

A187RPB

A187RPB

Powerex, Inc.

DIODE GEN PURP REV 1.2KV DO205AA

0

R7001005XXUA

R7001005XXUA

Powerex, Inc.

DIODE GEN PURP 1KV 550A DO200

0

R7S00212XX

R7S00212XX

Powerex, Inc.

DIODE GP 200V 1200A DO200AA R62

0

A390P

A390P

Powerex, Inc.

DIODE GP 1KV 400A DO200AA R62

0

1N3736R

1N3736R

Powerex, Inc.

RECTIFIER STUD MOUNT DO-9

0

A170RPD

A170RPD

Powerex, Inc.

DIODE GEN PURP 1.4KV 100A DO205

0

R7S01408XX

R7S01408XX

Powerex, Inc.

DIODE GP 1.4KV 800A DO200AA R62

0

R7201006XXOO

R7201006XXOO

Powerex, Inc.

DIODE GEN PURP 1KV 600A DO200AB

0

A430PD

A430PD

Powerex, Inc.

DIODE GP 1.4KV 1000A DO200AB

0

A177RB

A177RB

Powerex, Inc.

DIODE GEN PURP 200V 100A DO205AA

0

A437M

A437M

Powerex, Inc.

DIODE GEN PURP 600V 600A DO200AB

0

RBK84240XXOO

RBK84240XXOO

Powerex, Inc.

RECTIFIER DISC RBK

0

R6011025XXYA

R6011025XXYA

Powerex, Inc.

RECTIFIER STUD MOUNT REVERSE DO-

0

R9G01612XX

R9G01612XX

Powerex, Inc.

DIODE GP 1.6KV 1200A DO200AB

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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