Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
BYC8X-600P,127

BYC8X-600P,127

WeEn Semiconductors Co., Ltd

DIODE GEN PURP 600V 8A TO220FP

4438

SS32 V7G

SS32 V7G

TSC (Taiwan Semiconductor)

DIODE SCHOTTKY 3A 20V DO-214AB

0

ES1HL R3G

ES1HL R3G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 500V 1A SUB SMA

0

MBRM110LT3G

MBRM110LT3G

Sanyo Semiconductor/ON Semiconductor

DIODE SCHOTTKY 10V 1A POWERMITE

7038

ESGLW RQG

ESGLW RQG

TSC (Taiwan Semiconductor)

DIODE, SUPER FAST

0

S5B-E3/9AT

S5B-E3/9AT

Vishay General Semiconductor – Diodes Division

DIODE GEN PURP 100V 5A DO214AB

0

S1KL RUG

S1KL RUG

TSC (Taiwan Semiconductor)

DIODE GEN PURP 800V 1A SUB SMA

0

121NQ040-1

121NQ040-1

SMC Diode Solutions

DIODE SCHOTTKY 40V 120A PRM1-1

0

NTE6058

NTE6058

NTE Electronics, Inc.

R-300 PRV 70A CATH CASE

77

SK86L-TP

SK86L-TP

Micro Commercial Components (MCC)

DIODE SCHOTTKY 60V 8A DO214AB

5871

LSM335J/TR13

LSM335J/TR13

Roving Networks / Microchip Technology

DIODE SCHOTTKY 35V 3A DO214AB

0

RGP02-15E-E3/54

RGP02-15E-E3/54

Vishay General Semiconductor – Diodes Division

DIODE GEN PURP 1.5KV 500MA DO204

14108

D5810N04TVFXPSA1

D5810N04TVFXPSA1

IR (Infineon Technologies)

DIODE GEN PURP 400V 5800A

0

BYT53A-TAP

BYT53A-TAP

Vishay General Semiconductor – Diodes Division

DIODE AVALANCHE 50V 1.9A SOD57

0

VS-45EPS12LHM3

VS-45EPS12LHM3

Vishay General Semiconductor – Diodes Division

DIODES - TO-247-E3

426

P2500K-CT

P2500K-CT

DComponents

CUT-TAPE VERSION. STANDARD RECO

0

EGP20B

EGP20B

RECTIFIER DIODE, 2A, 100V, DO-15

25359

HS3MB M4G

HS3MB M4G

TSC (Taiwan Semiconductor)

DIODE GEN PURP 3A DO214AA

0

DPG30IM400PC-TUB

DPG30IM400PC-TUB

Wickmann / Littelfuse

POWER DIODE DISCRETES-FRED TO-26

2150

VS-45EPS16LHM3

VS-45EPS16LHM3

Vishay General Semiconductor – Diodes Division

DIODES - TO-247-E3

363

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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