Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
DA22F2100L

DA22F2100L

ROHM Semiconductor

DIODE GEN PURP 200V 1A SMD

0

RF601B2DTL

RF601B2DTL

ROHM Semiconductor

DIODE ARRAY GP 200V 3A CPD

0

DA227YFHT2R

DA227YFHT2R

ROHM Semiconductor

DIODE SWITCHING 80V SOT-543 EMD4

0

SCS240KE2HRC11

SCS240KE2HRC11

ROHM Semiconductor

DIODE SIC

0

RB481Y-90FHT2R

RB481Y-90FHT2R

ROHM Semiconductor

DIODE SCHOTTKY 30V EMD4

0

RB481YT2R

RB481YT2R

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 30V SC75A

0

RB480YFHT2R

RB480YFHT2R

ROHM Semiconductor

DIODE SCHOTTKY 30V EMD4

0

RB861YT2R

RB861YT2R

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 5V EMD4

0

RB481Y-40FHT2R

RB481Y-40FHT2R

ROHM Semiconductor

SCHOTTKY BARRIER DIODES (CORRESP

0

RB480Y-40FHT2R

RB480Y-40FHT2R

ROHM Semiconductor

DIODE SCHOTTKY 40V 200MA EMD4

0

RB085B-90TL

RB085B-90TL

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 90V 5A CPD

0

RBQ10B65ATL

RBQ10B65ATL

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 65V 5A CPD

0

RB480Y-90FHT2R

RB480Y-90FHT2R

ROHM Semiconductor

DIODE (RECTIFIER FRD) 90V-VRM 90

0

RB480YT2R

RB480YT2R

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 30V EMD4

7789

RB095B-90TL

RB095B-90TL

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 90V 3A CPD

0

RB095B-30TL

RB095B-30TL

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 30V 3A CPD

0

RB481Y-90T2R

RB481Y-90T2R

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 90V EMD4

0

RB085B-30TL

RB085B-30TL

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 30V 5A CPD

0

SCS240KE2AHRC

SCS240KE2AHRC

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 1200V TO247

0

RB095B-40TL

RB095B-40TL

ROHM Semiconductor

DIODE ARRAY SCHOTTKY 40V 3A CPD

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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